EP 1073933 A1 20010207 - OPTICALLY NON-LINEAR SEMICONDUCTOR MATERIAL AND A METHOD FOR THE PRODUCTION THEREOF
Title (en)
OPTICALLY NON-LINEAR SEMICONDUCTOR MATERIAL AND A METHOD FOR THE PRODUCTION THEREOF
Title (de)
OPTISCH NICHTLINEARES HALBLEITERMATERIAL UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
MATERIAU SEMI-CONDUCTEUR OPTIQUEMENT NON LINEAIRE ET SON PROCEDE DE FABRICATION
Publication
Application
Priority
- CH 9900157 W 19990420
- CH 98298 A 19980430
Abstract (en)
[origin: WO9957603A1] Essentially non-linear optical material characteristics of a semiconductor material which is epitaxially grown at low temperatures can be substantially improved by measures comprising the addition of foreign atoms and/or an additional curing. Epitaxially grown GaAs is dosed, for example at 300 DEG C, with Be in a concentration of 3 x 10<19> cm<-3>. The response time is reduced from 480 fs (curve 1.1) to 110 fs (curve 3.1) such that the absorption modulation is not reduced thereby or such that the non-saturable absorption losses do not increase. Semiconductor materials which have been subjected to at least one of the aforementioned measures during production exhibit impressionable, especially short response times and, at the same time, exhibit high absorption modulations and low non-saturable absorption losses. As a result, the semiconductor materials are excellently suited for non-linear optical applications such as optical information processing, optical communication or ultra-short pulse laser physics.
IPC 1-7
IPC 8 full level
G02F 1/35 (2006.01); G02F 1/355 (2006.01); H01S 3/098 (2006.01)
CPC (source: EP US)
G02F 1/3523 (2013.01 - EP US); G02F 1/3551 (2013.01 - EP US); H01S 3/1118 (2013.01 - EP US)
Citation (search report)
See references of WO 9957603A1
Designated contracting state (EPC)
AT CH DE FR GB LI
DOCDB simple family (publication)
WO 9957603 A1 19991111; EP 1073933 A1 20010207; US 6551850 B1 20030422
DOCDB simple family (application)
CH 9900157 W 19990420; EP 99913054 A 19990420; US 69855700 A 20001027