Global Patent Index - EP 1074051 A1

EP 1074051 A1 20010207 - VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME

Title (en)

VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME

Title (de)

VERTIKALER BIPOLARTRANSISTOR, INSBESONDERE AUF DER BASIS EINES SIGE-HETEROÜBERGANGES UND VERFAHREN ZU DESSEN HERSTELLUNG

Title (fr)

TRANSISTOR BIPOLAIRE VERTICAL, EN PARTICULIER A BASE A HETEROJONCTION SiGe, ET PROCEDE DE FABRICATION

Publication

EP 1074051 A1 20010207 (FR)

Application

EP 99913403 A 19990414

Priority

  • FR 9900867 W 19990414
  • FR 9805019 A 19980422

Abstract (en)

[origin: FR2778022A1] A vertical bipolar transistor has extrinsic base and collector regions, formed in a semiconductor layer (6) between an emitter (90) and an intrinsic collector (4), and base and collector metallizations (S) overlapping a field oxide. A vertical bipolar transistor comprises: (a) an intrinsic collector region (4) surrounded by a lateral insulation region; (b) a semiconductor layer (6) located partially between the emitter (90) and the intrinsic collector (4) and extending on both sides of the emitter above the lateral insulation region; (c) an intrinsic base region (60) formed in the semiconductor layer (6); (d) extrinsic base and collector regions respectively comprising first zones (61, 63), formed in the semiconductor layer at each side of the emitter and above a first portion (200, 201) of the lateral insulation region and mutually electrically isolated by a second portion of the lateral insulation region, and second zones (62, 64) extending in the intrinsic collector; and (e) base and collector metallizations (S) respectively located in contact with the corresponding first zones above the first portion of the lateral insulation region. An Independent claim is also included for a process for producing the above bipolar transistor.

IPC 1-7

H01L 29/732; H01L 29/737; H01L 21/331

IPC 8 full level

H01L 21/331 (2006.01); H01L 29/73 (2006.01); H01L 29/737 (2006.01)

CPC (source: EP US)

H01L 29/66242 (2013.01 - EP US); H01L 29/66287 (2013.01 - EP US); H01L 29/7378 (2013.01 - EP US)

Citation (search report)

See references of WO 9954939A1

Designated contracting state (EPC)

DE GB IT NL

DOCDB simple family (publication)

FR 2778022 A1 19991029; FR 2778022 B1 20010713; EP 1074051 A1 20010207; JP 2002512452 A 20020423; JP 4643005 B2 20110302; US 6384469 B1 20020507; WO 9954939 A1 19991028

DOCDB simple family (application)

FR 9805019 A 19980422; EP 99913403 A 19990414; FR 9900867 W 19990414; JP 2000545198 A 19990414; US 67402100 A 20001023