Global Patent Index - EP 1074051 A1

EP 1074051 A1 2001-02-07 - VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME

Title (en)

VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME

Title (de)

VERTIKALER BIPOLARTRANSISTOR, INSBESONDERE AUF DER BASIS EINES SIGE-HETEROÜBERGANGES UND VERFAHREN ZU DESSEN HERSTELLUNG

Title (fr)

TRANSISTOR BIPOLAIRE VERTICAL, EN PARTICULIER A BASE A HETEROJONCTION SiGe, ET PROCEDE DE FABRICATION

Publication

EP 1074051 A1 (FR)

Application

EP 99913403 A

Priority

  • FR 9900867 W
  • FR 9805019 A

Abstract (en)

[origin: FR2778022A1] A vertical bipolar transistor has extrinsic base and collector regions, formed in a semiconductor layer (6) between an emitter (90) and an intrinsic collector (4), and base and collector metallizations (S) overlapping a field oxide. A vertical bipolar transistor comprises: (a) an intrinsic collector region (4) surrounded by a lateral insulation region; (b) a semiconductor layer (6) located partially between the emitter (90) and the intrinsic collector (4) and extending on both sides of the emitter above the lateral insulation region; (c) an intrinsic base region (60) formed in the semiconductor layer (6); (d) extrinsic base and collector regions respectively comprising first zones (61, 63), formed in the semiconductor layer at each side of the emitter and above a first portion (200, 201) of the lateral insulation region and mutually electrically isolated by a second portion of the lateral insulation region, and second zones (62, 64) extending in the intrinsic collector; and (e) base and collector metallizations (S) respectively located in contact with the corresponding first zones above the first portion of the lateral insulation region. An Independent claim is also included for a process for producing the above bipolar transistor.

IPC 1-7 (main, further and additional classification)

H01L 29/732; H01L 21/331; H01L 29/737

IPC 8 full level (invention and additional information)

H01L 29/73 (2006.01); H01L 21/331 (2006.01); H01L 29/737 (2006.01)

CPC (invention and additional information)

H01L 29/66287 (2013.01); H01L 29/66242 (2013.01); H01L 29/7378 (2013.01)

Citation (search report)

See references of WO 9954939A1

Designated contracting state (EPC)

DE GB IT NL

EPO simple patent family

FR 2778022 A1 19991029; FR 2778022 B1 20010713; EP 1074051 A1 20010207; JP 2002512452 A 20020423; JP 4643005 B2 20110302; US 6384469 B1 20020507; WO 9954939 A1 19991028

INPADOC legal status


2008-02-13 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20070810

2001-02-07 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001010

2001-02-07 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE GB IT NL