EP 1074052 A1 20010207 - LATERAL HIGH-VOLTAGE SIDEWALL TRANSISTOR
Title (en)
LATERAL HIGH-VOLTAGE SIDEWALL TRANSISTOR
Title (de)
LATERALER HOCHVOLT-SEITENWANDTRANSISTOR
Title (fr)
TRANSISTOR LATERAL HAUTE TENSION DE PAROI LATERALE
Publication
Application
Priority
- DE 9900703 W 19990315
- DE 19818300 A 19980423
Abstract (en)
[origin: DE19818300C1] The invention relates to a lateral high-voltage sidewall transistor, wherein successively alternating semiconductor layers (4, 3) having a first and a second type of conductivity are provided on a slightly doped semiconductor substrate (1) having a second type of conductivity. A source area (10) having a first type of conductivity and a drain area (9) having a first type of conductivity extend through the semiconductor layers (4, 3) to the semiconductor substrate. The same applies to a gate (G) consisting of a gate trench fitted with a gate insulation layer (12) and filled with conductive material (14), which also extends through the semiconductor layers (4, 3) to the semiconductor body (1) and is located in the boundary area with the source area (10) in the direction of the drain area (9). At least a semiconductor area (11) having a second type of conductivity is provided on one side of the source area (10) and the gate trench, said area extending to the semiconductor substrate (1), below the source area (10) and partially below the gate trench.
IPC 1-7
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/0634 (2013.01 - EP US); H01L 29/402 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/7825 (2013.01 - EP US); H01L 29/78624 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US); H01L 29/4232 (2013.01 - EP US); H01L 29/4238 (2013.01 - EP US); H01L 29/7812 (2013.01 - EP US); H01L 29/7824 (2013.01 - EP US)
Citation (search report)
See references of WO 9956321A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19818300 C1 19990722; EP 1074052 A1 20010207; JP 2002513211 A 20020508; US 6507071 B1 20030114; WO 9956321 A1 19991104
DOCDB simple family (application)
DE 19818300 A 19980423; DE 9900703 W 19990315; EP 99916792 A 19990315; JP 2000546398 A 19990315; US 69443500 A 20001023