Global Patent Index - EP 1074052 A1

EP 1074052 A1 2001-02-07 - LATERAL HIGH-VOLTAGE SIDEWALL TRANSISTOR

Title (en)

LATERAL HIGH-VOLTAGE SIDEWALL TRANSISTOR

Title (de)

LATERALER HOCHVOLT-SEITENWANDTRANSISTOR

Title (fr)

TRANSISTOR LATERAL HAUTE TENSION DE PAROI LATERALE

Publication

EP 1074052 A1 (DE)

Application

EP 99916792 A

Priority

  • DE 9900703 W
  • DE 19818300 A

Abstract (en)

[origin: DE19818300C1] The invention relates to a lateral high-voltage sidewall transistor, wherein successively alternating semiconductor layers (4, 3) having a first and a second type of conductivity are provided on a slightly doped semiconductor substrate (1) having a second type of conductivity. A source area (10) having a first type of conductivity and a drain area (9) having a first type of conductivity extend through the semiconductor layers (4, 3) to the semiconductor substrate. The same applies to a gate (G) consisting of a gate trench fitted with a gate insulation layer (12) and filled with conductive material (14), which also extends through the semiconductor layers (4, 3) to the semiconductor body (1) and is located in the boundary area with the source area (10) in the direction of the drain area (9). At least a semiconductor area (11) having a second type of conductivity is provided on one side of the source area (10) and the gate trench, said area extending to the semiconductor substrate (1), below the source area (10) and partially below the gate trench.

IPC 1-7 (main, further and additional classification)

H01L 29/78; H01L 29/786

IPC 8 full level (invention and additional information)

H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)

CPC (invention and additional information)

H01L 29/402 (2013.01); H01L 29/0634 (2013.01); H01L 29/7813 (2013.01); H01L 29/7825 (2013.01); H01L 29/78624 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/4232 (2013.01); H01L 29/4238 (2013.01); H01L 29/7812 (2013.01); H01L 29/7824 (2013.01)

Citation (search report)

See references of WO 9956321A1

Designated contracting state (EPC)

DE FR GB IE IT

EPO simple patent family

DE 19818300 C1 19990722; EP 1074052 A1 20010207; JP 2002513211 A 20020508; US 6507071 B1 20030114; WO 9956321 A1 19991104

INPADOC legal status


2008-03-26 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20071002

2007-10-17 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20070907

2001-02-07 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001114

2001-02-07 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB IE IT