EP 1074991 A3 20010328 - Semiconductor memory device
Title (en)
Semiconductor memory device
Title (de)
Halbleiterspeichervorrichtung
Title (fr)
Dispositif de mémoire à semi-conducteur
Publication
Application
Priority
JP 21918899 A 19990802
Abstract (en)
[origin: EP1074991A2] A semiconductor memory includes a memory (101) having a plurality of input/output terminals (D1 to Dn) for inputting/outputting parallel data; a parallel/serial conversion circuit (202) connected to said parallel terminals (D1 to Dn) of said memory (101) so as to convert said parallel data of said memory (101) into serial data and input/output the serial data; a plurality of test terminals (311-1 to 311-n) connected to said parallel terminals (D1 to Dn) of said memory (101), respectively; and a switch control circuit (301) arranged between said parallel terminals (D1 to Dn) of said memory (101) and said parallel/serial conversion circuit (202), for disabling said parallel/serial conversion circuit (202). <IMAGE>
IPC 1-7
IPC 8 full level
G01R 31/28 (2006.01); G06K 19/07 (2006.01); G06K 19/077 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01); G11C 29/48 (2006.01)
CPC (source: EP US)
G11C 7/1006 (2013.01 - EP US); G11C 7/1045 (2013.01 - EP US); G11C 29/48 (2013.01 - EP US)
Citation (search report)
- [A] WO 9841990 A1 19980924 - SIEMENS AG [DE], et al
- [A] US 5862146 A 19990119 - CHEN TECK LIONG [SG], et al
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 1074991 A2 20010207; EP 1074991 A3 20010328; EP 1074991 B1 20070228; DE 60033598 D1 20070412; DE 60033598 T2 20070621; JP 2001043700 A 20010216; US 6301182 B1 20011009
DOCDB simple family (application)
EP 00302365 A 20000323; DE 60033598 T 20000323; JP 21918899 A 19990802; US 53287400 A 20000322