EP 1075708 A2 20010214 - METHOD FOR PRODUCING CONTACT STRUCTURES IN SOLAR CELLS
Title (en)
METHOD FOR PRODUCING CONTACT STRUCTURES IN SOLAR CELLS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON KONTAKTSTRUKTUREN IN SOLARZELLEN
Title (fr)
PROCEDE DE REALISATION DE STRUCTURES DE CONTACT DANS DES CELLULES SOLAIRES
Publication
Application
Priority
- DE 9901246 W 19990427
- DE 19819200 A 19980429
Abstract (en)
[origin: DE19819200A1] The invention relates to a method for producing contact structures in semiconductor components, especially solar cells, and semiconductor components having these contact structures. According to the invention, recesses which extend through the first layer to or into a second layer located under said first layer are etched after positioning an etching mask (3) over a first layer or a series of layers (2). The etching is carried out in such a way that the etching mask is etched underneath and/or at least one area of the first layer (2) is provided with negative flanks. Afterwards, an electrically conductive material (9) is inserted in the recesses, whereby the etching mask (3) or the first layer (2) forms a shadow mask for inserting the material. The conductive material is placed in the recesses only up to a height at which there is still no contact between the conductive material (9) and the first layer (2). The structures permit the emitter to contact the base without additional masking. As a result, the invention makes it possible to produce metal contacts on solar cells in an easier and economical manner.
IPC 1-7
IPC 8 full level
H01L 21/768 (2006.01); H01L 31/0224 (2006.01); H01L 31/04 (2006.01); H01L 31/068 (2006.01); H01L 31/18 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01)
CPC (source: EP US)
H01L 21/768 (2013.01 - EP US); H01L 21/76804 (2013.01 - EP US); H01L 21/7688 (2013.01 - EP US); H01L 31/022425 (2013.01 - EP US); H01L 31/022441 (2013.01 - EP US); H01L 31/0682 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); H01L 21/0332 (2013.01 - EP US); H01L 21/3081 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 9956324A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB IE IT LI NL PT SE
DOCDB simple family (publication)
DE 19819200 A1 19991111; DE 19819200 B4 20060105; AU 4600599 A 19991116; AU 739818 B2 20011018; EP 1075708 A2 20010214; EP 1091420 A2 20010411; EP 1091420 A3 20010523; JP 2002513212 A 20020508; US 6423567 B1 20020723; WO 9956324 A2 19991104; WO 9956324 A3 19991216
DOCDB simple family (application)
DE 19819200 A 19980429; AU 4600599 A 19990427; DE 9901246 W 19990427; EP 00125466 A 19990427; EP 99929034 A 19990427; JP 2000546401 A 19990427; US 67417600 A 20001129