EP 1078217 A1 20010228 - NON-DESTRUCTIVE ANALYSIS OF A SEMICONDUCTOR USING REFLECTANCE SPECTROMETRY
Title (en)
NON-DESTRUCTIVE ANALYSIS OF A SEMICONDUCTOR USING REFLECTANCE SPECTROMETRY
Title (de)
ZERSTOERUNGSFREIE ANALYSE EINES HALBLEITERS MITTELS REFLEKTIONSSPEKTROMETRIE
Title (fr)
ANALYSE NON-DESTRUCTIVE DE SEMI-CONDUCTEUR PAR SPECTROMETRIE PAR REFLECTANCE
Publication
Application
Priority
- US 9908721 W 19990420
- US 8263998 P 19980421
- US 29424799 A 19990419
Abstract (en)
[origin: WO9954679A1] A method for the determination of parameters of interests of a semiconductor sample is provided. For example, the thickness of an epitaxial or implanted layer, the thickness of a transition layer, and the concentration of free carriers in a substrate layer may be determined without having to destroy the semiconductor sample in the process. In an embodiment, a method starts by measuring an experimental reflectance spectrum of the semiconductor (202). An analytical model of the semiconductor having a film layer, a transition layer and a substrate layer is then constructed (208). Next, optical constants n and k for the film layer, transition layer, and substrate layer are expressed as a function of doping level (210). A profile of the transition layer is determined (211), and if an abrupt profile exists, the transition layer is further modeled as having a plurality of sections, wherein each of the sections is assigned an s-polarization matrix and a p-polarization matrix. An overall modeled reflectance spectrum is then calculated (212) and the parameters therein are varied to achieve a best fit relationship with the experimental reflectance spectrum (214). Thus, the parameter of interest can be determined (216).
IPC 1-7
IPC 8 full level
G01B 11/06 (2006.01); G01N 21/00 (2006.01); G01N 21/35 (2006.01); H01L 21/66 (2006.01)
CPC (source: EP US)
G01B 11/0641 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 9954679 A1 19991028; AU 3571899 A 19991108; AU 743188 B2 20020117; CA 2328624 A1 19991028; DE 69917899 D1 20040715; DE 69917899 T2 20050825; EP 1078217 A1 20010228; EP 1078217 A4 20010725; EP 1078217 B1 20040609; JP 2002512441 A 20020423; US 6242739 B1 20010605
DOCDB simple family (application)
US 9908721 W 19990420; AU 3571899 A 19990420; CA 2328624 A 19990420; DE 69917899 T 19990420; EP 99917648 A 19990420; JP 2000544982 A 19990420; US 29424799 A 19990419