EP 1080501 A1 20010307 - POWER DIODE STRUCTURE
Title (en)
POWER DIODE STRUCTURE
Title (de)
LEISTUNGSDIODEN-STRUKTUR
Title (fr)
STRUCTURE DE DIODE DE PUISSANCE
Publication
Application
Priority
- DE 9901453 W 19990512
- DE 19823944 A 19980528
Abstract (en)
[origin: DE19823944A1] The invention relates to a power diode structure having improved dynamic characteristics which comprises a semiconductor body (1) of a first conduction type. A semiconductor zone (2) of the other conduction type which is contrary to the first conduction type is embedded in the one surface of said semiconductor body (1). The power diode also comprises an anode (4) which contacts the semiconductor zone (2), and has a cathode (5) which contacts the semiconductor body (1). At least one floating region (6) of the second conduction type is provided in the semiconductor body (1).
IPC 1-7
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/744 (2006.01); H01L 29/76 (2006.01); H01L 29/772 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP US)
H01L 29/0634 (2013.01 - EP US); H01L 29/744 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US); H01L 29/861 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 9962123A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19823944 A1 19991202; EP 1080501 A1 20010307; JP 2002517097 A 20020611; US 6465863 B1 20021015; WO 9962123 A1 19991202
DOCDB simple family (application)
DE 19823944 A 19980528; DE 9901453 W 19990512; EP 99934497 A 19990512; JP 2000551441 A 19990512; US 70152700 A 20001128