EP 1084285 A1 20010321 - PERFORATED SILICON MEMBRANE PROVIDED BY AN ELECTROCHEMICAL ETCHING METHOD
Title (en)
PERFORATED SILICON MEMBRANE PROVIDED BY AN ELECTROCHEMICAL ETCHING METHOD
Title (de)
PERFORIERTE SILIZIUM-MEMBRAN, HERGESTELLT MITTELS EINES ELEKTROCHEMISCHEN ÄTZVERFAHRENS
Title (fr)
MEMBRANE EN SILICIUM PERFOREE PRODUITE SELON UN PROCEDE D'ATTAQUE ELECTROCHIMIQUE
Publication
Application
Priority
- DE 9901292 W 19990503
- DE 19820756 A 19980508
Abstract (en)
[origin: DE19820756C1] A perforated workpiece, comprising a silicon substrate (1) having a first region (6) with through-pores (4) and a second region (7) with blind pores, is new. An Independent claim is also included for producing a perforated workpiece by electrochemically etching one face (2) of a silicon substrate (1) to form pores (4) of depth less than the substrate thickness, providing the opposite substrate face (3) with a mask layer which exposes first regions (6) of this opposite substrate face, etching the exposed face regions (6) to the bottoms of the pores (4) and then removing the mask layer.
IPC 1-7
IPC 8 full level
C25F 3/02 (2006.01); C25F 3/12 (2006.01); H01P 1/20 (2006.01)
CPC (source: EP KR US)
C25F 3/02 (2013.01 - EP US); C25F 3/12 (2013.01 - KR); H01P 1/20 (2013.01 - EP US); Y10T 428/24273 (2015.01 - EP US); Y10T 428/24331 (2015.01 - EP US)
Citation (search report)
See references of WO 9958746A1
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
DE 19820756 C1 19991111; DE 59906526 D1 20030911; EP 1084285 A1 20010321; EP 1084285 B1 20030806; JP 2002514689 A 20020521; KR 20010052320 A 20010625; TW 552322 B 20030911; US 6558770 B1 20030506; WO 9958746 A1 19991118
DOCDB simple family (application)
DE 19820756 A 19980508; DE 59906526 T 19990503; DE 9901292 W 19990503; EP 99929077 A 19990503; JP 2000548533 A 19990503; KR 20007012422 A 20001107; TW 88106375 A 19990421; US 70827700 A 20001108