EP 1084514 A1 20010321 - GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
Title (en)
GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
Title (de)
GaP-HALBLEITERANORDNUNG UND VERFAHREN ZUR HERSTELLUNG DERSELBEN
Title (fr)
DISPOSITIF A SEMICONDUCTEUR GaP ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9901549 W 19990526
- DE 19824566 A 19980602
Abstract (en)
[origin: DE19824566C1] A semiconductor arrangement comprising a GaP substrate and an epitaxial layer arranged on said substrate whereby said layer contains an n-doped and a p-doped partial layer. A p-n junction is formed in a boundary area between both partial layers. The expitaxial layer contains an extraneous substance, i.e. an element for the 3<rd> and or 5<th> main group, that is not identical to N and the maximum concentration thereof in the GaP epitaxial layer is less than 10<20> cm<-3>.
IPC 1-7
IPC 8 full level
C30B 19/10 (2006.01); C30B 29/44 (2006.01); H01L 21/208 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/30 (2010.01)
CPC (source: EP US)
H01L 33/0008 (2013.01 - EP US); H01L 33/025 (2013.01 - EP US); H01L 33/305 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19824566 C1 19991202; EP 1084514 A1 20010321; JP 2002517906 A 20020618; TW 442980 B 20010623; US 2001010375 A1 20010802; WO 9963602 A1 19991209
DOCDB simple family (application)
DE 19824566 A 19980602; DE 9901549 W 19990526; EP 99936321 A 19990526; JP 2000552723 A 19990526; TW 88108828 A 19990528; US 72868200 A 20001204