Global Patent Index - EP 1084514 A1

EP 1084514 A1 2001-03-21 - GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Title (en)

GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Title (de)

GaP-HALBLEITERANORDNUNG UND VERFAHREN ZUR HERSTELLUNG DERSELBEN

Title (fr)

DISPOSITIF A SEMICONDUCTEUR GaP ET SON PROCEDE DE PRODUCTION

Publication

EP 1084514 A1 (DE)

Application

EP 99936321 A

Priority

  • DE 9901549 W
  • DE 19824566 A

Abstract (en)

[origin: DE19824566C1] A semiconductor arrangement comprising a GaP substrate and an epitaxial layer arranged on said substrate whereby said layer contains an n-doped and a p-doped partial layer. A p-n junction is formed in a boundary area between both partial layers. The expitaxial layer contains an extraneous substance, i.e. an element for the 3<rd> and or 5<th> main group, that is not identical to N and the maximum concentration thereof in the GaP epitaxial layer is less than 10<20> cm<-3>.

IPC 1-7 (main, further and additional classification)

H01L 33/00; H01L 21/208

IPC 8 full level (invention and additional information)

C30B 19/10 (2006.01); C30B 29/44 (2006.01); H01L 21/208 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/30 (2010.01)

CPC (invention and additional information)

H01L 33/305 (2013.01); H01L 33/0008 (2013.01); H01L 33/025 (2013.01)

Citation (search report)

See references of WO 9963602A1

Designated contracting state (EPC)

DE FR GB IT

EPO simple patent family

DE 19824566 C1 19991202; EP 1084514 A1 20010321; JP 2002517906 A 20020618; TW 442980 B 20010623; US 2001010375 A1 20010802; WO 9963602 A1 19991209

INPADOC legal status


2008-05-28 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20071201

2003-05-21 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: INFINEON TECHNOLOGIES AG

2001-05-23 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001123

2001-03-21 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB IT