EP 1086353 A1 20010328 - METHOD AND APPARATUS FOR DETERMINING PROCESSING CHAMBER CLEANING OR WAFER ETCHING ENDPOINT
Title (en)
METHOD AND APPARATUS FOR DETERMINING PROCESSING CHAMBER CLEANING OR WAFER ETCHING ENDPOINT
Title (de)
VERFAHREN UND APPARAT ZUR BESTIMMUNG DES ENDZEITPUNKTES BEI DER SÄUBERUNG EINES BEARBEITUNGSRAUMES ODER DER ÄTZUNG EINES HALBLEITERWAFERS
Title (fr)
PROCEDE ET APPAREIL PERMETTANT DE DETERMINER LA FIN DU NETTOYAGE D'UNE CHAMBRE DE TRAITEMENT OU LA FIN DE LA GRAVURE D'UNE TRANCHE
Publication
Application
Priority
- US 9913339 W 19990611
- US 8908998 P 19980612
- US 32952099 A 19990610
Abstract (en)
[origin: WO9964814A1] The gas withdrawn from a silicon wafer processing chamber, during wafer etching or chamber cleaning with a fluoride free radical-containing plasma, is analyzed optically. The apparatus consists of an infrared radiation source (10) mounted in a holder (12), to which is attached a heat sink (14). The holder (12) is mounted upon a source mirror housing (16), which contains a collimating mirror (18) supported on a source mirror holder (20). The filter sensor unit includes an endpoint instrument assembly mounting plate (22), which is mounted upon a detector mirror housing (24) and in turn contains detector focussing mirror (26) supported upon a detector mirror holder (28).
IPC 1-7
IPC 8 full level
G01N 21/77 (2006.01); G01B 9/02 (2006.01); G01N 21/35 (2014.01); G01N 21/3504 (2014.01); G01N 33/00 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01)
CPC (source: EP)
G01N 21/3504 (2013.01); G01N 21/85 (2013.01); H01J 37/32972 (2013.01); G01N 2021/8411 (2013.01)
Designated contracting state (EPC)
AT BE DE ES FI FR GB IE IT NL SE
DOCDB simple family (publication)
WO 9964814 A1 19991216; EP 1086353 A1 20010328; EP 1086353 A4 20010822; IL 140055 A0 20020210; JP 2002517740 A 20020618
DOCDB simple family (application)
US 9913339 W 19990611; EP 99928616 A 19990611; IL 14005599 A 19990611; JP 2000553766 A 19990611