Global Patent Index - EP 1090398 A2

EP 1090398 A2 20010411 - CRITICAL DOPING IN HIGH-Tc SUPERCONDUCTORS FOR MAXIMAL FLUX PINNING AND CRITICAL CURRENTS

Title (en)

CRITICAL DOPING IN HIGH-Tc SUPERCONDUCTORS FOR MAXIMAL FLUX PINNING AND CRITICAL CURRENTS

Title (de)

KRITISCHE DOTIERUNG IN HOCHTEMPERATUR-SUPRALEITERN FÜR MAXIMALE "FLUX PINNING" UND KRITISCHE STRÖME

Title (fr)

DOPAGE CRITIQUE DES SUPRACONDUCTEURS A TEMPERATURE CRITIQUE ELEVEE POUR UN LAMINAGE DE FLUX ET DES COURANTS CRITIQUES MAXIMAUX

Publication

EP 1090398 A2 20010411 (EN)

Application

EP 99931620 A 19990618

Priority

  • NZ 9900095 W 19990618
  • NZ 33072898 A 19980618
  • NZ 33397199 A 19990129

Abstract (en)

[origin: WO9966541A2] A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised at hole concentration p APPROX 0.19. HTSC compounds are also claimed.

IPC 1-7

H01B 12/00; H01L 39/12; C04B 35/50

IPC 8 full level

C01G 1/00 (2006.01); C01G 29/00 (2006.01); H01B 12/00 (2006.01); H01B 13/00 (2006.01); H10N 60/85 (2023.01)

CPC (source: EP)

H10N 60/857 (2023.02)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

WO 9966541 A2 19991223; WO 9966541 A3 20000420; AU 4806499 A 20000105; EP 1090398 A2 20010411; EP 1090398 A4 20070502; JP 2002518287 A 20020625

DOCDB simple family (application)

NZ 9900095 W 19990618; AU 4806499 A 19990618; EP 99931620 A 19990618; JP 2000555283 A 19990618