EP 1090417 A1 20010411 - METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMS IN IC MANUFACTURING

Title (en)

METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMS IN IC MANUFACTURING

Title (de)

VERFAHREN ZUR HERSTELLUNG VON PECVD-TITANSCHICHTEN UND CVD-TITANNITRIDSCHICHTEN FÜR INTEGRIERTE SCHALTUNGEN IN EIN UND DERSELBEN REAKTIONSKAMMER

Title (fr)

PROCEDE PERMETTANT DE TRAITER AVEC UNE SEULE CHAMBRE UN DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET UN DEPOT CHIMIQUE EN PHASE VAPEUR DE FILMS DE TITANE DANS LA FABRICATION DE CIRCUITS INTEGRES

Publication

EP 1090417 A1 20010411 (EN)

Application

EP 00926143 A 20000419

Priority

US 0010552 W 20000419
US 29448799 A 19990420

Abstract (en)

[origin: WO0063959A1] A single chamber method for depositing a stack including titanium and titanium mitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressue are maintained at substantially constant values throughout deposition of the stack.

IPC 1-7

H01L 21/285; H01L 21/3205

IPC 8 full level

C23C 16/30 (2006.01); C23C 16/02 (2006.01); C23C 16/14 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)

CPC (source: EP KR US)

C23C 16/0218 (2013.01 - EP KR US); C23C 16/14 (2013.01 - EP US); C23C 16/34 (2013.01 - EP KR US); C23C 16/50 (2013.01 - KR); C23C 16/56 (2013.01 - EP US); H01L 21/28556 (2013.01 - EP US); H01L 21/28568 (2013.01 - EP US); H01L 21/76843 (2013.01 - EP KR US); H01L 21/76856 (2013.01 - EP KR US)

Citation (search report)

See references of WO 0063959A1

Designated contracting state (EPC)

CH DE FR GB IT LI NL

DOCDB simple family (publication)

WO 0063959 A1 20001026; CN 1187795 C 20050202; CN 1304549 A 20010718; EP 1090417 A1 20010411; JP 2002542399 A 20021210; JP 3782938 B2 20060607; KR 100428521 B1 20040429; KR 20010053027 A 20010625; TW 463242 B 20011111; US 6274496 B1 20010814

DOCDB simple family (application)

US 0010552 W 20000419; CN 00800630 A 20000419; EP 00926143 A 20000419; JP 2000612993 A 20000419; KR 20007014441 A 20001219; TW 89107467 A 20000420; US 55383300 A 20000421