Global Patent Index - EP 1093587 A2

EP 1093587 A2 2001-04-25 - METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD

Title (en)

METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD

Title (de)

VERFAHREN ZUM EINSTELLEN DER MAGNETISIERUNG DER BIASSCHICHT EINES MAGNETO-RESISTIVEN SENSORELEMENTS, DEMGEMÄSS BEARBEITETES SENSORELEMENT ODER SENSORELEMENTSYSTEM SOWIE ZUR DURCHFÜHRUNG DES VERFAHRENS GEEIGNETES SENSORELEMENT UND SENSORSUBSTRAT

Title (fr)

PROCEDE PERMETTANT DE REGULER L'AIMANTATION DE LA COUCHE DE POLARISATION D'UN ELEMENT CAPTEUR MAGNETORESISTANT, ELEMENT CAPTEUR OU SYSTEME D'ELEMENTS CAPTEURS REGULE SELON LEDIT PROCEDE, ET ELEMENT CAPTEUR ET SUBSTRAT DE CAPTEUR CONVENANT POUR LA MISE EN OEUVRE DUDIT PROCEDE

Publication

EP 1093587 A2 (DE)

Application

EP 99945873 A

Priority

  • DE 9902017 W
  • DE 19830344 A

Abstract (en)

[origin: DE19830344A1] The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.

IPC 1-7 (main, further and additional classification)

G01R 33/09

IPC 8 full level (invention and additional information)

H01F 13/00 (2006.01); G01B 7/30 (2006.01); G01R 33/09 (2006.01); H01L 43/12 (2006.01)

CPC (invention and additional information)

B82Y 25/00 (2013.01); G01B 7/30 (2013.01); G01R 33/093 (2013.01); H01L 43/12 (2013.01)

Citation (search report)

See references of WO 0002006A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

DE 19830344 A1 20000120; DE 19830344 C2 20030410; EP 1093587 A2 20010425; JP 2002519873 A 20020702; US 2001020847 A1 20010913; WO 0002006 A2 20000113; WO 0002006 A3 20000831

INPADOC legal status


2003-08-13 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20030201

2001-04-25 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001208

2001-04-25 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE