EP 1093587 A2 20010425 - METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD
Title (en)
METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD
Title (de)
VERFAHREN ZUM EINSTELLEN DER MAGNETISIERUNG DER BIASSCHICHT EINES MAGNETO-RESISTIVEN SENSORELEMENTS, DEMGEMÄSS BEARBEITETES SENSORELEMENT ODER SENSORELEMENTSYSTEM SOWIE ZUR DURCHFÜHRUNG DES VERFAHRENS GEEIGNETES SENSORELEMENT UND SENSORSUBSTRAT
Title (fr)
PROCEDE PERMETTANT DE REGULER L'AIMANTATION DE LA COUCHE DE POLARISATION D'UN ELEMENT CAPTEUR MAGNETORESISTANT, ELEMENT CAPTEUR OU SYSTEME D'ELEMENTS CAPTEURS REGULE SELON LEDIT PROCEDE, ET ELEMENT CAPTEUR ET SUBSTRAT DE CAPTEUR CONVENANT POUR LA MISE EN OEUVRE DUDIT PROCEDE
Publication
Application
Priority
- DE 9902017 W 19990701
- DE 19830344 A 19980707
Abstract (en)
[origin: DE19830344A1] The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.
IPC 1-7
IPC 8 full level
G01B 7/30 (2006.01); G01R 33/09 (2006.01); H01F 13/00 (2006.01); H01L 43/12 (2006.01)
CPC (source: EP US)
B82Y 25/00 (2013.01 - EP US); G01B 7/30 (2013.01 - EP US); G01R 33/093 (2013.01 - EP US); H10N 50/01 (2023.02 - EP US)
Citation (search report)
See references of WO 0002006A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19830344 A1 20000120; DE 19830344 C2 20030410; EP 1093587 A2 20010425; JP 2002519873 A 20020702; US 2001020847 A1 20010913; WO 0002006 A2 20000113; WO 0002006 A3 20000831
DOCDB simple family (application)
DE 19830344 A 19980707; DE 9902017 W 19990701; EP 99945873 A 19990701; JP 2000558354 A 19990701; US 75608301 A 20010108