Global Patent Index - EP 1095404 A1

EP 1095404 A1 2001-05-02 - CIRCUIT AND A METHOD FOR THE PRODUCTION THEREOF

Title (en)

CIRCUIT AND A METHOD FOR THE PRODUCTION THEREOF

Title (de)

SCHALTUNGSANORDNUNG MIT EINEM DRUCKKONTAKT UND VERFAHREN ZU DEREN HERSTELLUNG

Title (fr)

CIRCUIT ET SON PROCEDE DE PRODUCTION

Publication

EP 1095404 A1 (DE)

Application

EP 99945844 A

Priority

  • DE 9901973 W
  • DE 19830537 A

Abstract (en)

[origin: WO0003437A1] According to the invention, a pressure contact (D) is arranged on a conducting region of the circuit in order to reinforce the connections of the circuit. Said pressure contact contains metal, e.g. copper, comprises an essentially planar upper surface which is situated above a passivation layer (S), and has flanks which are, to a large extent, essentially vertical. The metal is electrodeposited using a mask (P) which does not cover an area of the conducting region that is to be contacted, thus resulting in the production of the pressure contact (D). The electrodeposition process is concluded as long as the upper surface of the pressure contact (D) is situated underneath an upper surface of the mask (P). A conducting layer (L) which, for example, contains copper can be deposited on the conducting region in order to permit the application of a current for the electrodeposition process and can be deposited as a crystallization base.

IPC 1-7 (main, further and additional classification)

H01L 23/051; H01L 21/768; H01L 23/48

IPC 8 full level (invention and additional information)

H01L 21/288 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01)

CPC (invention and additional information)

H01L 24/72 (2013.01); H01L 21/288 (2013.01); H01L 21/2885 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01039 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01044 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01058 (2013.01); H01L 2924/01061 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01)

Combination set (CPC)

H01L 2924/1301 + H01L 2924/00

Citation (search report)

See references of WO 0003437A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

WO 0003437 A1 20000120; EP 1095404 A1 20010502; JP 2002520856 A 20020709

INPADOC legal status


2003-03-05 [18R] REFUSED

- Effective date: 20020916

2001-07-18 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20010530

2001-05-02 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001221

2001-05-02 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE