EP 1095408 A1 20010502 - VERTICAL SEMICONDUCTOR ELEMENT WITH REDUCED ELECTRIC SURFACE FIELD
Title (en)
VERTICAL SEMICONDUCTOR ELEMENT WITH REDUCED ELECTRIC SURFACE FIELD
Title (de)
VERTIKALES HALBLEITERBAUELEMENT MIT REDUZIERTEM ELEKTRISCHEM OBERFLACHENFELD
Title (fr)
COMPOSANT SEMI-CONDUCTEUR VERTICAL A CHAMP SUPERFICIEL ELECTRIQUE REDUIT
Publication
Application
Priority
- DE 9902039 W 19990702
- DE 19830332 A 19980707
Abstract (en)
[origin: DE19830332A1] The invention relates to a vertical semiconductor element comprising a semiconductor body (1, 2) of a first conductivity type, whereby at least one zone (4) of another opposite conductivity type is embedded in the surface of said semiconductor body, in addition to areas (8) of another conductivity type that are provided in the semiconductor body (1, 2) on a plane running substantially parallel to the surface of the surface area. The areas (8) are highly doped so that they cannot be cleared when voltage is applied to the charge carriers.
IPC 1-7
IPC 8 full level
H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/744 (2006.01); H01L 29/78 (2006.01); H01L 29/80 (2006.01); H01L 29/08 (2006.01); H01L 29/24 (2006.01)
CPC (source: EP KR US)
H01L 29/0623 (2013.01 - EP US); H01L 29/0634 (2013.01 - EP US); H01L 29/66068 (2013.01 - EP US); H01L 29/78 (2013.01 - KR); H01L 29/7802 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 0002250A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19830332 A1 20000120; DE 19830332 C2 20030417; EP 1095408 A1 20010502; JP 2002520816 A 20020709; KR 20010074650 A 20010804; US 2001020732 A1 20010913; US 6847091 B2 20050125; WO 0002250 A1 20000113
DOCDB simple family (application)
DE 19830332 A 19980707; DE 9902039 W 19990702; EP 99944266 A 19990702; JP 2000558555 A 19990702; KR 20017000132 A 20010105; US 75653901 A 20010108