EP 1097471 A1 20010509 - INTEGRATED CIRCUIT WITH AT LEAST ONE TRANSISTOR AND A CAPACITOR AND CORRESPONDING PRODUCTION METHOD
Title (en)
INTEGRATED CIRCUIT WITH AT LEAST ONE TRANSISTOR AND A CAPACITOR AND CORRESPONDING PRODUCTION METHOD
Title (de)
INTEGRIERTE SCHALTUNGSANORDNUNG MIT MINDESTENS EINEM TRANSISTOR UND EINEM KONDENSATOR UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
CIRCUIT INTEGRE COMPORTANT AU MOINS UN TRANSISTOR ET UN CONDENSATEUR, ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9901501 W 19990519
- DE 19822500 A 19980519
Abstract (en)
[origin: WO9960608A2] A structured conductive layer (L) and a structure, by means of which the transistor can be controlled, e.g. a word line (W), are arranged on top of each other. A vertical conductive structure (S), e.g. a spacer, connects a first source/drain zone (S/D1) of the transistor to the conductive layer (L), both of which form a first capacitor electrode having a large effective surface with higher packing density. A capacitor dielectric (KD) and a second capacitor electrode (P2) placed on top thereof are arranged above the vertical conductive structure (S) and the conductive layer (L). The transistor can be a vertical transistor. The vertical conductive structure (S) can be arranged on a first flank (F1) of the first source/drain zone (S/D1) and a gate electrode of the transistor can be mounted on a bordering second flank of the source/drain zone (S/D1). The circuit can be a DRAM cell array in which channel stop structures are arranged on the first flank of the first trenches, gate electrodes are arranged on the second flanks of the first trenches and vertical conductive structures are arranged on the second trenches (G2) and in which the word lines (W) extend between the second trenches (G2).
IPC 1-7
IPC 8 full level
H01L 21/00 (2006.01); H01L 21/8242 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP US)
H10B 12/033 (2023.02 - EP US); H10B 12/053 (2023.02 - EP US); H10B 12/31 (2023.02 - EP US); H10B 12/34 (2023.02 - EP US)
Citation (search report)
See references of WO 9960608A2
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 9960608 A2 19991125; WO 9960608 A3 20021024; DE 59914711 D1 20080508; EP 1097471 A1 20010509; EP 1097471 B1 20080326; TW 428313 B 20010401; US 6593614 B1 20030715
DOCDB simple family (application)
DE 9901501 W 19990519; DE 59914711 T 19990519; EP 99936280 A 19990519; TW 88107961 A 19990517; US 71633600 A 20001120