Global Patent Index - EP 1097473 A1

EP 1097473 A1 2001-05-09 - PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT

Title (en)

PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT

Title (de)

PLASMAVERFAHREN ZUR ABSCHEIDUNG VON SILIZIUMNITRIDSCHICHTEN HOHER QUALITÄT UND NIEDRIGEM WASSERSTOFFGEHALT

Title (fr)

PROCEDE AU PLASMA DESTINE A DEPOSER DU NITRURE DE SILICIUM A BONNE QUALITE DE FILM ET A FAIBLE TENEUR EN HYDROGENE

Publication

EP 1097473 A1 (EN)

Application

EP 99930623 A

Priority

  • US 9914244 W
  • US 11353498 A

Abstract (en)

[origin: WO0003425A1] A high-quality plasma CVD nitride layer is formed at a process temperature of between 400 DEG C and 600 DEG C from a precursor gas including silane and nitrogen. The improved nitride layer is used as an etch stop layer, a spacer, and as a lining layer for shallow trench isolation and in a pre-metal dielectric layer.

IPC 1-7 (main, further and additional classification)

H01L 21/318; C23C 16/34

IPC 8 full level (invention and additional information)

C23C 16/34 (2006.01); H01L 21/318 (2006.01)

CPC (invention and additional information)

H01L 21/3185 (2013.01); C23C 16/345 (2013.01)

Citation (search report)

See references of WO 0003425A1

Designated contracting state (EPC)

BE CH DE GB LI NL

EPO simple patent family

WO 0003425 A1 20000120; EP 1097473 A1 20010509; JP 2002520849 A 20020709; JP 4364438 B2 20091118

INPADOC legal status


2010-10-06 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20100414

2001-08-29 [RIN1] INVENTOR (CORRECTION)

- Inventor name: HUANG, JUDY

2001-08-29 [RIN1] INVENTOR (CORRECTION)

- Inventor name: YAU, WAI-FAN

2001-08-29 [RIN1] INVENTOR (CORRECTION)

- Inventor name: CHEUNG, DAVID

2001-07-11 [RIN1] INVENTOR (CORRECTION)

- Inventor name: HUANG, JUDY

2001-07-11 [RIN1] INVENTOR (CORRECTION)

- Inventor name: YAU, WAI-FAN

2001-07-11 [RIN1] INVENTOR (CORRECTION)

- Inventor name: CHEUNG, DAVID

2001-05-09 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20010208

2001-05-09 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): BE CH DE GB LI NL