EP 1097473 A1 20010509 - PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT
Title (en)
PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT
Title (de)
PLASMAVERFAHREN ZUR ABSCHEIDUNG VON SILIZIUMNITRIDSCHICHTEN HOHER QUALITÄT UND NIEDRIGEM WASSERSTOFFGEHALT
Title (fr)
PROCEDE AU PLASMA DESTINE A DEPOSER DU NITRURE DE SILICIUM A BONNE QUALITE DE FILM ET A FAIBLE TENEUR EN HYDROGENE
Publication
Application
Priority
- US 9914244 W 19990623
- US 11353498 A 19980710
Abstract (en)
[origin: WO0003425A1] A high-quality plasma CVD nitride layer is formed at a process temperature of between 400 DEG C and 600 DEG C from a precursor gas including silane and nitrogen. The improved nitride layer is used as an etch stop layer, a spacer, and as a lining layer for shallow trench isolation and in a pre-metal dielectric layer.
IPC 1-7
IPC 8 full level
C23C 16/34 (2006.01); H01L 21/318 (2006.01)
CPC (source: EP US)
C23C 16/345 (2013.01 - EP); H01L 21/0217 (2013.01 - EP US); H01L 21/02211 (2013.01 - EP US); H01L 21/02274 (2013.01 - EP US); H01L 21/02129 (2013.01 - EP US)
Citation (search report)
See references of WO 0003425A1
Designated contracting state (EPC)
BE CH DE GB LI NL
DOCDB simple family (publication)
WO 0003425 A1 20000120; EP 1097473 A1 20010509; JP 2002520849 A 20020709; JP 4364438 B2 20091118
DOCDB simple family (application)
US 9914244 W 19990623; EP 99930623 A 19990623; JP 2000559586 A 19990623