EP 1099014 A1 20010516 - METHOD AND DEVICE FOR PRODUCING AT LEAST ONE SILICON CARBIDE MONOCRYSTAL
Title (en)
METHOD AND DEVICE FOR PRODUCING AT LEAST ONE SILICON CARBIDE MONOCRYSTAL
Title (de)
VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG MINDESTENS EINES SiC-EINKRISTALLS
Title (fr)
DISPOSITIF ET PROCEDE POUR LA PRODUCTION D'AU MOINS UN MONOCRISTAL DE SiC
Publication
Application
Priority
- DE 9902066 W 19990705
- DE 19831556 A 19980714
Abstract (en)
[origin: DE19917601A1] A silicon carbide single crystal production apparatus comprises a crucible (20) with one or more vitreous carbon inserts (51). An Independent claim is also included for a silicon carbide single crystal production process in which heat flux (61) is controlled by one or more vitreous carbon inserts (51) within a crucible (20). Preferred Features: The crucible (20) is made of graphite and a vitreous carbon insert (51), especially in the form of a hollow cylindrical gas channel, is located between a solid SiC supply region (30) and a crucible wall (21) adjacent a crystal region (12).
IPC 1-7
IPC 8 full level
C30B 29/36 (2006.01); C30B 23/00 (2006.01)
CPC (source: EP US)
C30B 23/00 (2013.01 - EP US); C30B 29/36 (2013.01 - EP US); Y10T 117/10 (2015.01 - EP US); Y10T 117/1092 (2015.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19917601 A1 20000120; CN 1213177 C 20050803; CN 1308690 A 20010815; DE 59901083 D1 20020502; EP 1099014 A1 20010516; EP 1099014 B1 20020327; JP 2002520252 A 20020709; JP 4574853 B2 20101104; US 2001004875 A1 20010628; US 6344085 B2 20020205; WO 0004212 A1 20000127
DOCDB simple family (application)
DE 19917601 A 19990419; CN 99808355 A 19990705; DE 59901083 T 19990705; DE 9902066 W 19990705; EP 99942775 A 19990705; JP 2000560301 A 19990705; US 76180901 A 20010116