EP 1099250 A2 20010516 - METHOD AND APPARATUS FOR FORMING IMPROVED METAL INTERCONNECTS
Title (en)
METHOD AND APPARATUS FOR FORMING IMPROVED METAL INTERCONNECTS
Title (de)
VERFAHREN UND VORRICHTUNG FÜR VERBESSERTE METALL-LEITUNGS-STRUKTUREN
Title (fr)
PROCEDE ET APPAREIL DE FORMATION D'INTERCONNEXIONS METALLIQUES AMELIOREES
Publication
Application
Priority
- US 9916887 W 19990726
- US 12689098 A 19980731
Abstract (en)
[origin: WO0007236A2] Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter-etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.
IPC 1-7
IPC 8 full level
H01L 21/285 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP US)
H01L 21/76805 (2013.01 - EP US); H01L 21/76814 (2013.01 - EP US); H01L 21/76831 (2013.01 - EP US); H01L 21/76834 (2013.01 - EP US); H01L 21/76838 (2013.01 - EP US); H01L 21/76844 (2013.01 - EP US); H01L 21/76877 (2013.01 - EP US); H01L 23/5226 (2013.01 - EP US); H01L 23/53238 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0007236 A2 20000210; WO 0007236 A3 20000622; EP 1099250 A2 20010516; EP 1246240 A2 20021002; JP 2002521842 A 20020716; TW 410431 B 20001101; US 2002028576 A1 20020307; US 2002115287 A1 20020822; US 2004152301 A1 20040805; US 6287977 B1 20010911; US 6559061 B2 20030506; US 6709987 B2 20040323; US 6992012 B2 20060131
DOCDB simple family (application)
US 9916887 W 19990726; EP 02014021 A 19990726; EP 99937492 A 19990726; JP 2000562948 A 19990726; TW 88108728 A 19990527; US 12689098 A 19980731; US 6770902 A 20020205; US 76146604 A 20040121; US 92889101 A 20010813