Global Patent Index - EP 1099250 A2

EP 1099250 A2 2001-05-16 - METHOD AND APPARATUS FOR FORMING IMPROVED METAL INTERCONNECTS

Title (en)

METHOD AND APPARATUS FOR FORMING IMPROVED METAL INTERCONNECTS

Title (de)

VERFAHREN UND VORRICHTUNG FÜR VERBESSERTE METALL-LEITUNGS-STRUKTUREN

Title (fr)

PROCEDE ET APPAREIL DE FORMATION D'INTERCONNEXIONS METALLIQUES AMELIOREES

Publication

EP 1099250 A2 (EN)

Application

EP 99937492 A

Priority

  • US 9916887 W
  • US 12689098 A

Abstract (en)

[origin: WO0007236A2] Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter-etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.

IPC 1-7 (main, further and additional classification)

H01L 21/768

IPC 8 full level (invention and additional information)

H01L 21/285 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)

CPC (invention and additional information)

H01L 21/76844 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01)

Combination set (CPC)

H01L 2924/0002 + H01L 2924/00

Citation (search report)

See references of WO 0007236A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

WO 0007236 A2 20000210; WO 0007236 A3 20000622; EP 1099250 A2 20010516; EP 1246240 A2 20021002; JP 2002521842 A 20020716; TW 410431 B 20001101; US 2002028576 A1 20020307; US 2002115287 A1 20020822; US 2004152301 A1 20040805; US 6287977 B1 20010911; US 6559061 B2 20030506; US 6709987 B2 20040323; US 6992012 B2 20060131

INPADOC legal status


2004-08-11 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20040203

2001-07-18 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20010530

2001-05-16 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20010227

2001-05-16 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE