EP 1099255 A1 20010516 - METHOD FOR PRODUCING AND SEPARATING SEMICONDUCTOR LIGHT-EMITTING DIODES
Title (en)
METHOD FOR PRODUCING AND SEPARATING SEMICONDUCTOR LIGHT-EMITTING DIODES
Title (de)
VERFAHREN ZUR HERSTELLUNG UND VEREINZELUNG VON HALBLEITER-LICHTEMISSIONSDIODEN
Title (fr)
PROCEDE DE PRODUCTION ET DE SEPARATION DE DIODES ELECTROLUMINESCENTES A SEMI-CONDUCTEUR MICROSCOPIQUES
Publication
Application
Priority
- DE 9901693 W 19990610
- DE 19828970 A 19980629
Abstract (en)
[origin: DE19828970A1] The invention relates to a method for producing and separating microscopic semiconductor light-emitting diodes, comprising the following steps: a) producing a semiconductor light-emitting device (100) comprising a pn-junction (2-4) and metallization layers (6, 7); b) applying an etching mask (9-11) with a predetermined structure to one side of the semiconductor device (100), the masked areas corresponding to the arrangement and shape of the diodes (30) being formed; c) applying a support (8, 12) to the other side of the semiconductor device (100); d) vertically etching the semiconductor material into the openings of the etching mask (9-11) as far as the support (8, 12), hereby producing a diode arrangement containing a plurality of diodes (30) beneath the masked area; e) removing the etching mask (9-11); f) providing a holding device (20) containing recesses (22) whose arrangement and shape correspond to those of the diodes (30) and which are suitable for receiving diodes (30); g) locking the diode arrangement into the holding device (20); and h) removing the support (8, 12). The inventive method can be used for producing an LED display device with a high image point density.
IPC 1-7
IPC 8 full level
H01L 21/78 (2006.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2006.01)
CPC (source: EP US)
H01L 21/78 (2013.01 - EP US); H01L 25/0753 (2013.01 - EP US); H01L 27/156 (2013.01 - EP US); H01L 33/0062 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 0001014A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19828970 A1 20000105; DE 19828970 C2 20000518; EP 1099255 A1 20010516; US 2001041410 A1 20011115; US 6475819 B2 20021105; WO 0001014 A1 20000106
DOCDB simple family (application)
DE 19828970 A 19980629; DE 9901693 W 19990610; EP 99938154 A 19990610; US 75028600 A 20001229