EP 1100978 A1 20010523 - METHOD AND APPARATUS FOR FORMING AMORPHOUS AND POLYCRYSTALLINE SILICON GERMANIUM ALLOY FILMS
Title (en)
METHOD AND APPARATUS FOR FORMING AMORPHOUS AND POLYCRYSTALLINE SILICON GERMANIUM ALLOY FILMS
Title (de)
VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG AMORPHER UND POLYKRISTALLINER SCHICHTEN AUS SILIZIUM-GERMANIUM LEGIERUNGEN
Title (fr)
PROCEDE ET APPAREIL DE FORMATION DE FILMS D'ALLIAGE SILICIUM/GERMANIUM AMORPHES ET POLYCRISTALLINS
Publication
Application
Priority
- US 9914773 W 19990629
- US 11352998 A 19980709
Abstract (en)
[origin: WO0003061A1] A method and apparatus for depositing a polycrystalline or amorphous silicon/germanium alloy thin film on a substrate. According to the present invention, the substrate is placed in a deposition chamber. A reacting gas mix including a silicon source gas and germane (GeH4) is then provided into the deposition chamber. The germane and silicon source gas are provided into the deposition chamber at a ratio so that the amount of germane in the chamber is less than or equal to 3 % of the amount of silicon source gas in the chamber. The silicon source gas is then thermally decomposed to form silicon atoms and the germane is thermally decomposed to form germanium atoms. A polycrystalline or amorphous silicon film is then formed on a substrate from the germanium atoms and silicon atoms.
IPC 1-7
IPC 8 full level
C23C 16/22 (2006.01); C23C 16/30 (2006.01); H01L 21/205 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01)
CPC (source: EP KR)
C23C 16/22 (2013.01 - EP KR)
Citation (search report)
See references of WO 0003061A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0003061 A1 20000120; EP 1100978 A1 20010523; JP 2002520487 A 20020709; KR 20010053459 A 20010625
DOCDB simple family (application)
US 9914773 W 19990629; EP 99932079 A 19990629; JP 2000559275 A 19990629; KR 20017000352 A 20010109