EP 1102872 A1 20010530 - NOVEL ORGANOCUPROUS PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF A COPPER FILM
Title (en)
NOVEL ORGANOCUPROUS PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF A COPPER FILM
Title (de)
NEUE ORGANOKUPFER-VORLÄUFER FÜR CVD VON KUPFERFILMEN
Title (fr)
NOUVEAUX PRECURSEURS ORGANO-CUIVREUX DESTINES AU DEPOT CHIMIQUE EN PHASE VAPEUR D'UN FILM DE CUIVRE
Publication
Application
Priority
- KR 9900743 W 19991207
- KR 19990013236 A 19990415
Abstract (en)
[origin: WO0063461A1] An organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the mass production of a contaminant-free copper film having good thermal stability, wherein: R1, R2 and R3 are each independently a C1-8 alkoxy, aryl or aryloxy group, R4 and R5 are each independently hydrogen, fluorine, a CnF2n+1 or CnH2n+1 group, n being an integer in the range of 1 to 6, R6 is hydrogen, fluorine or C1-4 alkyl group, and m is 1 or 2, when m is 1, C=C represents C2C, and when m is 2, C=C represents C=C.
IPC 1-7
IPC 8 full level
C07F 1/08 (2006.01); C23C 16/18 (2006.01); C23C 18/08 (2006.01); C23C 18/38 (2006.01); C23C 24/08 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01)
CPC (source: EP KR)
C07F 1/08 (2013.01 - EP); C23C 16/18 (2013.01 - EP); C23C 18/38 (2013.01 - KR)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0063461 A1 20001026; CN 1194117 C 20050323; CN 1290309 A 20010404; EP 1102872 A1 20010530; EP 1102872 A4 20080430; JP 2002542397 A 20021210; KR 100298125 B1 20010913; KR 19990046683 A 19990705; RU 2181725 C2 20020427; TW 524881 B 20030321
DOCDB simple family (application)
KR 9900743 W 19991207; CN 99802648 A 19991207; EP 99959960 A 19991207; JP 2000612535 A 19991207; KR 19990013236 A 19990415; RU 2000118774 A 19991207; TW 88122014 A 19991215