EP 1103067 A1 20010530 - DRAM MEMORY CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
DRAM MEMORY CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
DRAM-SPEICHERKONDENSATOR UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
CONDENSATEUR DE MEMOIRE DRAM ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9901977 W 19990701
- DE 19830155 A 19980706
Abstract (en)
[origin: WO0002237A1] The invention relates to a DRAM memory capacitor comprising a BaSrTiO3 (BST) dielectric. Said dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 21/314 (2006.01)
CPC (source: EP US)
H01L 21/02197 (2013.01 - EP US); H01L 21/02266 (2013.01 - EP US); H01L 21/31691 (2016.02 - US); H01L 28/56 (2013.01 - EP US)
Citation (search report)
See references of WO 0002237A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0002237 A1 20000113; EP 1103067 A1 20010530; US 2001031526 A1 20011018; US 6552385 B2 20030422
DOCDB simple family (application)
DE 9901977 W 19990701; EP 99944246 A 19990701; US 75608201 A 20010108