Global Patent Index - EP 1103067 A1

EP 1103067 A1 2001-05-30 - DRAM MEMORY CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF

Title (en)

DRAM MEMORY CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF

Title (de)

DRAM-SPEICHERKONDENSATOR UND VERFAHREN ZU DESSEN HERSTELLUNG

Title (fr)

CONDENSATEUR DE MEMOIRE DRAM ET SON PROCEDE DE PRODUCTION

Publication

EP 1103067 A1 (DE)

Application

EP 99944246 A

Priority

  • DE 9901977 W
  • DE 19830155 A

Abstract (en)

[origin: WO0002237A1] The invention relates to a DRAM memory capacitor comprising a BaSrTiO3 (BST) dielectric. Said dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.

IPC 1-7 (main, further and additional classification)

H01L 21/02; H01L 21/316

IPC 8 full level (invention and additional information)

H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 21/314 (2006.01)

CPC (invention and additional information)

H01L 28/56 (2013.01); H01L 21/02197 (2013.01); H01L 21/02266 (2013.01); H01L 21/31691 (2013.01)

Citation (search report)

See references of WO 0002237A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

WO 0002237 A1 20000113; EP 1103067 A1 20010530; US 2001031526 A1 20011018; US 6552385 B2 20030422

INPADOC legal status


2010-05-05 [18R] REFUSED

- Effective date: 20091117

2006-10-11 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20051208

2001-05-30 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20001215

2001-05-30 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE