EP 1103072 A1 20010530 - THIN-LAYERED SEMICONDUCTOR STRUCTURE COMPRISING A HEAT DISTRIBUTION LAYER
Title (en)
THIN-LAYERED SEMICONDUCTOR STRUCTURE COMPRISING A HEAT DISTRIBUTION LAYER
Title (de)
HALBLEITER-DÜNNSCHICHTSTRUKTUR MIT EINER SCHICHT ZUR WÄRMEVERTEILUNG
Title (fr)
STRUCTURE SEMICONDUCTRICE EN COUCHE MINCE COMPORTANT UNE COUCHE DE REPARTITION DE CHALEUR
Publication
Application
Priority
- FR 9901659 W 19990708
- FR 9808919 A 19980710
Abstract (en)
[origin: FR2781082A1] The invention concerns a thin layered semiconductor structure comprising a surface semiconductor layer (2) separated from a support substrate (1) by an intermediate zone (3), said intermediate zone (3) being a multilayer electrically insulating the surface semiconductor layer from the support substrate. The intermediate zone has an interface electrical property considered to be sufficiently good with the surface semiconductor layer and comprises at least a first layer, having suitable thermal conductivity for ensuring the proper functioning of the electronic device(s) which are to be produced from the surface semiconductor layer (2), the intermediate zone further including a second layer, insulating and with low dielectric constant, located between the first layer and the support substrate.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/373 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP KR)
H01L 21/0262 (2013.01 - KR); H01L 21/306 (2013.01 - KR); H01L 21/324 (2013.01 - KR); H01L 21/76251 (2013.01 - EP KR); H01L 23/3735 (2013.01 - EP); H01L 23/3735 (2013.01 - KR); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
See references of WO 0003429A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
FR 2781082 A1 20000114; FR 2781082 B1 20020920; EP 1103072 A1 20010530; JP 2002525839 A 20020813; KR 100662694 B1 20061228; KR 20010071813 A 20010731; WO 0003429 A1 20000120
DOCDB simple family (application)
FR 9808919 A 19980710; EP 99929439 A 19990708; FR 9901659 W 19990708; JP 2000559589 A 19990708; KR 20017000370 A 20010109