EP 1105921 A1 20010613 - PROCESS FOR MAPPING METAL CONTAMINANT CONCENTRATION ON A SILICON WAFER SURFACE
Title (en)
PROCESS FOR MAPPING METAL CONTAMINANT CONCENTRATION ON A SILICON WAFER SURFACE
Title (de)
CHARAKTERISIERUNG DER METALLVERUNREINIGUNGSKONZENTRATION EINER SILIZIUMSCHEIBENOBERFLÄCHE
Title (fr)
PROCEDE DE CARTOGRAPHIE DE LA CONCENTRATION EN CONTAMINANTS METALLIQUES SUR LA SURFACE D'UNE PLAQUETTE DE SILICIUM
Publication
Application
Priority
- JP 20323098 A 19980717
- US 9916109 W 19990716
Abstract (en)
[origin: WO0004579A1] A process is provided for preparing a reference wafer having a surface which is substantially uniformly contaminated with one or more metals of interest and which is suitable for use in the calibration of a total reflection fluorescent X-ray apparatus. The process comprises immersing a virgin wafer in a treatment solution obtained by mixing an aqueous stock solution containing a water-soluble salt of a metallic contaminant of interest with an organic solvent, and then drying thus immersed wafer.
IPC 1-7
IPC 8 full level
G01N 23/223 (2006.01); G01N 1/00 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01)
CPC (source: EP KR)
H01L 22/00 (2013.01 - KR); H01L 22/34 (2013.01 - EP)
Citation (search report)
See references of WO 0004579A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0004579 A1 20000127; WO 0004579 A9 20010705; CN 1350700 A 20020522; EP 1105921 A1 20010613; JP 2000035410 A 20000202; KR 20010071617 A 20010728; TW 416116 B 20001221
DOCDB simple family (application)
US 9916109 W 19990716; CN 99808750 A 19990716; EP 99937277 A 19990716; JP 20323098 A 19980717; KR 20007014851 A 20001227; TW 88112167 A 19990805