EP 1113241 A1 20010704 - Titanium semiconductor bridge igniter
Title (en)
Titanium semiconductor bridge igniter
Title (de)
Titanium Halbleiterbrückenzünder
Title (fr)
Dispositif pyrotechnique à pontage semi-conducteur à base de titanium
Publication
Application
Priority
US 47034399 A 19991222
Abstract (en)
A titanium semiconductor bridge igniter (10, 10') has a substrate (12, 12') on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22') covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10') against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10') to an elevated temperature, e.g., from about 37 DEG C to about 250 DEG C. <IMAGE>
IPC 1-7
IPC 8 full level
F42B 3/10 (2006.01); F42B 3/13 (2006.01); H01B 7/00 (2006.01)
CPC (source: EP KR US)
Citation (applicant)
- US 4708060 A 19871124 - BICKES JR ROBERT W [US], et al
- US 4976200 A 19901211 - BENSON DAVID A [US], et al
Citation (search report)
- [XA] WO 9742462 A1 19971113 - SCB TECHNOLOGIES INC [US]
- [A] US 5905226 A 19990518 - BAGINSKI THOMAS A [US]
- [A] DE 19732380 A1 19990211 - TELEFUNKEN MICROELECTRON [DE], et al
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1113241 A1 20010704; JP 2001241896 A 20010907; KR 20010070344 A 20010725; US 2007056459 A1 20070315; US 2008017063 A1 20080124
DOCDB simple family (application)
EP 00128005 A 20001220; JP 2000382092 A 20001215; KR 20000080976 A 20001222; US 55599006 A 20061102; US 82952607 A 20070727