EP 1114210 A1 20010711 - LOW-TEMPERATURE PROCESS FOR FORMING AN EPITAXIAL LAYER ON A SEMICONDUCTOR SUBSTRATE
Title (en)
LOW-TEMPERATURE PROCESS FOR FORMING AN EPITAXIAL LAYER ON A SEMICONDUCTOR SUBSTRATE
Title (de)
NIEDRIGTEMPERATURVERFAHREN ZUR HERSTELLUNG EPITAKTISCHER SCHICHTEN AUF EIN HALBLEITERSUBSTRAT
Title (fr)
PROCEDE BASSE TEMPERATURE PERMETTANT DE FORMER UNE COUCHE EPITAXIALE SUR UN SUBSTRAT SEMICONDUCTEUR
Publication
Application
Priority
- US 9919684 W 19990826
- US 9805798 P 19980826
Abstract (en)
[origin: WO0012785A1] A low temperature process for forming an epitaxial layer on a workpiece surface, without requiring ultrahigh vacuum or ultraclean conditions in the processing chamber during formation of the epitaxial layer. The process further allows for the simultaneous formation of an epitaxial layer on a plurality of workpieces (28). The workpieces are placed in chamber (12) with multi controlled heater (212) and controllers (308 and 306). The gas (250) is supplied via a pipe and panel (248) to control flow.
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01); C30B 25/02 (2006.01); C30B 25/16 (2006.01)
CPC (source: EP)
C30B 25/16 (2013.01); C30B 29/06 (2013.01)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0012785 A1 20000309; EP 1114210 A1 20010711; EP 1114210 A4 20030416; JP 2002523908 A 20020730
DOCDB simple family (application)
US 9919684 W 19990826; EP 99945264 A 19990826; JP 2000567765 A 19990826