EP 1114451 A1 20010711 - MICROELECTRONIC STRUCTURE, PRODUCTION METHOD AND UTILIZATION OF THE SAME
Title (en)
MICROELECTRONIC STRUCTURE, PRODUCTION METHOD AND UTILIZATION OF THE SAME
Title (de)
MIKROELEKTRONISCHE STRUKTUR, VERFAHREN ZU DEREN HERSTELLUNG UND DEREN VERWENDUNG IN EINER SPEICHERZELLE
Title (fr)
STRUCTURE MICRO-ELECTRONIQUE, PROCEDE PERMETTANT DE LA PRODUIRE ET SON UTILISATION DANS UNE CELLULE DE MEMORISATION
Publication
Application
Priority
- DE 9902414 W 19990802
- DE 19839605 A 19980831
Abstract (en)
[origin: WO0013224A1] The invention relates to a microelectronic structure which is particularly suitable as part of a storage capacitor, comprising a semiconductor structure (10), a barrier structure (11), an electrode structure (5) and a dielectric structure (6) made of high epsilon material. The electrode structure (5) has a tensile mechanical layer voltage. The microelectronic structure is especially produced by platinum sputtering to form an electrode structure (5) at a sputtering temperature of at least 200 DEG C.
IPC 1-7
IPC 8 full level
H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/8242 (2006.01)
CPC (source: EP KR US)
H01L 28/60 (2013.01 - EP US); H10B 12/00 (2023.02 - KR)
Citation (search report)
See references of WO 0013224A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 0013224 A1 20000309; CN 1165974 C 20040908; CN 1317151 A 20011010; EP 1114451 A1 20010711; JP 2002524850 A 20020806; KR 100499429 B1 20050707; KR 20010074912 A 20010809; TW 457703 B 20011001; US 2001032992 A1 20011025; US 6670668 B2 20031230
DOCDB simple family (application)
DE 9902414 W 19990802; CN 99810508 A 19990802; EP 99952272 A 19990802; JP 2000568116 A 19990802; KR 20017002709 A 20010228; TW 88112279 A 19990720; US 79620801 A 20010228