EP 1114464 A1 20010711 - ELECTRONIC DEVICES WITH BARRIER FILM AND PROCESS FOR MAKING SAME
Title (en)
ELECTRONIC DEVICES WITH BARRIER FILM AND PROCESS FOR MAKING SAME
Title (de)
ELEKTRONISCHE VORRICHTUNGEN MIT SPERRFILM UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIFS ELECTRONIQUES POURVUS DE FILMS BARRIERES ET PROCEDE DE FABRICATION
Publication
Application
Priority
- US 9916719 W 19990818
- US 13708398 A 19980820
- US 13708498 A 19980820
- US 13708598 A 19980820
- US 13708698 A 19980820
- US 13708798 A 19980820
- US 13708898 A 19980820
- US 13708998 A 19980820
- US 21512798 A 19981218
- US 21512898 A 19981218
Abstract (en)
[origin: WO0011721A1] A semiconductor device having a barrier film (47) comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film (47, 49) is used for preventing the diffusion of atoms of another material (45) such as copper conductor, into a substrate (46), such as a semiconducting material or an insulating material, and an oxide layer (48). Methods for making the barrier film (47) in a semiconductor device are also covered. The extremely thin barrier film (47, 49) makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
IPC 1-7
IPC 8 full level
C23C 14/02 (2006.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); C23C 16/14 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP)
C23C 14/025 (2013.01); C23C 14/18 (2013.01); C23C 14/5806 (2013.01); C23C 16/0281 (2013.01); C23C 16/14 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01)
Citation (search report)
See references of WO 0011721A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DOCDB simple family (application)
US 9916719 W 19990818; EP 99943619 A 19990818