EP 1115895 B1 20021120 - METHOD FOR TREATING, BY NITRIDING, A SILICON SUBSTRATE FOR FORMING A THIN INSULATING LAYER
Title (en)
METHOD FOR TREATING, BY NITRIDING, A SILICON SUBSTRATE FOR FORMING A THIN INSULATING LAYER
Title (de)
VERFAHREN ZUM NITRIEREN EINES SILIZIUM-SUBSTRATES ZUR ERZEUGUNG EINER ISOLATIONSBESCHICHTUNG
Title (fr)
PROCEDE DE TRAITEMENT, PAR NITRURATION, D'UN SUBSTRAT DE SILICIUM POUR LA FORMATION D'UNE COUCHE ISOLANTE MINCE
Publication
Application
Priority
- FR 9902228 W 19990920
- FR 9811746 A 19980921
Abstract (en)
[origin: FR2783530A1] Silicon substrate preparation for insulating thin film formation, comprises relatively low temperature treatment in a low pressure nitric oxide-based atmosphere. A silicon substrate is prepared for insulating thin film formation by deoxidation and then heat treatment at <= 750 deg C in an NO-based atmosphere at <= 5\*10<3> Pa pressure. Independent claims are also included for the following: (i) a microelectronic device production process comprising formation of an insulating surface layer (24) on a silicon substrate (10) prepared by the above method; and (ii) a substrate comprising a silicon layer (10) having a native oxide-free area (12) in contact with a 0.5-1.5 nm thick silicon oxynitride layer (22) which is covered with a 2-5 nm thick insulating layer.
IPC 1-7
IPC 8 full level
C23C 8/28 (2006.01); C23C 28/04 (2006.01)
CPC (source: EP US)
C23C 8/28 (2013.01 - EP US); C23C 28/044 (2013.01 - EP US); Y10T 428/24926 (2015.01 - EP US)
Designated contracting state (EPC)
DE GB IT
DOCDB simple family (publication)
FR 2783530 A1 20000324; FR 2783530 B1 20010831; DE 69904069 D1 20030102; DE 69904069 T2 20030717; EP 1115895 A1 20010718; EP 1115895 B1 20021120; US 6551698 B1 20030422; WO 0017412 A1 20000330
DOCDB simple family (application)
FR 9811746 A 19980921; DE 69904069 T 19990920; EP 99943005 A 19990920; FR 9902228 W 19990920; US 76353201 A 20010404