EP 1116255 A1 20010718 - INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES
Title (en)
INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES
Title (de)
ELEKTRONENFELDEMISSIONSVORRICHTUNG MIT ISOLIERTEM GATE UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
COMPOSANTS D'EMISSION DE CHAMP D'ELECTRONS A GRILLE ISOLEE ET LEURS PROCEDES DE FABRICATION
Publication
Application
Priority
- US 0020144 W 20000724
- US 14557099 P 19990726
Abstract (en)
[origin: WO0108192A1] A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a microchamber (110). The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only, and direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchamber, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a gate electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices, including formation in situ of a vacuum microchamber.
IPC 1-7
IPC 8 full level
H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01J 21/10 (2006.01); H01J 31/12 (2006.01)
CPC (source: EP KR)
H01J 1/30 (2013.01 - KR); H01J 9/025 (2013.01 - EP); H01J 21/105 (2013.01 - EP)
Citation (search report)
See references of WO 0108192A1
Designated contracting state (EPC)
DE FI FR GB NL
DOCDB simple family (publication)
WO 0108192 A1 20010201; CA 2355660 A1 20010201; CN 1319246 A 20011024; EP 1116255 A1 20010718; JP 2003505843 A 20030212; KR 20010075311 A 20010809
DOCDB simple family (application)
US 0020144 W 20000724; CA 2355660 A 20000724; CN 00801523 A 20000724; EP 00948927 A 20000724; JP 2001512613 A 20000724; KR 20017003710 A 20010323