EP 1116256 A1 20010718 - VACUUM FIELD-EFFECT DEVICE AND FABRICATION PROCESS THEREFOR
Title (en)
VACUUM FIELD-EFFECT DEVICE AND FABRICATION PROCESS THEREFOR
Title (de)
VAKUUM-FELDEFFEKTANORDNUNG UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
DISPOSITIF A EFFET DE CHAMP A VIDE ET PROCEDE DE FABRICATION
Publication
Application
Priority
- US 0020230 W 20000725
- US 14557099 P 19990726
- US 47698499 A 19991231
- US 47778899 A 19991231
Abstract (en)
[origin: WO0108193A1] An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), and one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed to extend in overlapping alignment with the emitting edge (85) of the lateral field-emission source and with a portion of the vacuum-channel region (120). If the gate(s) are omitted, the device performs as an ultra-high speed diode. A preferred fabrication process for the device uses a sacrificial material temporarily deposited in a trench for the vacuum-channel region which is covered with an insulating cover. An access hole in the cover allows removal of the sacrificial material. As part of a preferred fabrication process, the drain preferably acts also as a sealing plug, plugging the access hole and sealing the vacuum-channel region after the vacuum-channel region is evacuated.
IPC 1-7
IPC 8 full level
H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01J 9/40 (2006.01); H01J 21/02 (2006.01); H01J 21/04 (2006.01); H01J 21/10 (2006.01); H01L 29/66 (2006.01)
CPC (source: EP KR)
B82Y 30/00 (2013.01 - EP); C01B 32/05 (2017.07 - KR); H01J 1/30 (2013.01 - KR); H01J 9/025 (2013.01 - EP); H01J 21/105 (2013.01 - EP); B82Y 40/00 (2013.01 - KR)
Citation (search report)
See references of WO 0108193A1
Designated contracting state (EPC)
DE FI FR GB NL
DOCDB simple family (publication)
WO 0108193 A1 20010201; CA 2345629 A1 20010201; CN 1327610 A 20011219; EP 1116256 A1 20010718; JP 2003505844 A 20030212; KR 20010075312 A 20010809
DOCDB simple family (application)
US 0020230 W 20000725; CA 2345629 A 20000725; CN 00801522 A 20000725; EP 00948950 A 20000725; JP 2001512614 A 20000725; KR 20017003711 A 20010323