EP 1116263 A2 20010718 - METHOD FOR PRODUCING AN OHMIC CONTACT
Title (en)
METHOD FOR PRODUCING AN OHMIC CONTACT
Title (de)
VERFAHREN ZUM HERSTELLEN EINES OHMSCHEN KONTAKTS
Title (fr)
PROCEDE POUR REALISER UN CONTACT OHMIQUE
Publication
Application
Priority
- DE 9902875 W 19990910
- DE 19843648 A 19980923
Abstract (en)
[origin: DE19939107A1] Silicon carbide component production comprises ohmic contact formation before high temperature epitaxial layer growth. Production of a component having a silicon carbide substrate (1) with ohmic and Schottky contacts comprises applying an ohmic contact metallization on the substrate back face prior to growing an epitaxial layer on the substrate front face at above 1300 deg C and applying Schottky contact metallization on the epitaxial layer. Preferred Features: The ohmic contact metal is Nb, Ta, Mo or W.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/04 (2006.01); H01L 29/24 (2006.01); H01L 29/43 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
H01L 21/0485 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US); H01L 29/45 (2013.01 - EP US); H01L 29/47 (2013.01 - EP US); H01L 29/6606 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US); Y10S 438/931 (2013.01 - EP US)
Citation (search report)
See references of WO 0017919A2
Designated contracting state (EPC)
CH DE FR GB LI SE
DOCDB simple family (publication)
DE 19939107 A1 20000330; EP 1116263 A2 20010718; JP 2002525870 A 20020813; US 2001039105 A1 20011108; US 6365494 B2 20020402; WO 0017919 A2 20000330; WO 0017919 A3 20001116
DOCDB simple family (application)
DE 19939107 A 19990818; DE 9902875 W 19990910; EP 99969531 A 19990910; JP 2000571488 A 19990910; US 81692101 A 20010323