EP 1116270 A1 20010718 - INTEGRATED CIRCUIT COMPRISING VERTICAL TRANSISTORS, AND A METHOD FOR THE PRODUCTION THEREOF
Title (en)
INTEGRATED CIRCUIT COMPRISING VERTICAL TRANSISTORS, AND A METHOD FOR THE PRODUCTION THEREOF
Title (de)
INTEGRIERTE SCHALTUNGSANORDNUNG MIT VERTIKALTRANSISTOREN UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
ENSEMBLE CIRCUIT INTEGRE COMPORTANT DES TRANSISTORS VERTICAUX, ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9903031 W 19990922
- DE 19844083 A 19980925
Abstract (en)
[origin: WO0019529A1] The transistor is configured as a vertical MOS transistor and comprises a series of layers (SF, SF*) which is arranged on a substrate (1) doped with a first type of conductivity. Said series of layers has a lower layer (U) for a first source/drain region, a middle layer (M) which is doped with a first type of conductivity and which is provided for a channel region, and has an upper layer (O) for a second source/drain region. A connecting structure (V) which is doped with a first type of conductivity is arranged on at least one first surface of the series of layers (SF, SF*) in order to electrically connect the channel region to the substrate (1). A gate electrode of the transistor is arranged on at least one second surface of the series of layers (SF, SF*). The connecting structure (V) can be arranged between the series of layers (SF, SF*) and another series of layers (SF, SF*) which can belong to the same or another transistor. The dimensions of the connecting structure (V) and of the series of layers (SF, SF*) can be sublithographic. The production results in a self-adjusting manner. The circuit is suited as a storage cell arrangement having a high packing density.
IPC 1-7
H01L 21/8242; H01L 21/8246; H01L 21/8239; H01L 27/108; H01L 27/112
IPC 8 full level
H01L 21/8234 (2006.01); H01L 21/336 (2006.01); H01L 27/04 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H10B 20/00 (2023.01); H10B 99/00 (2023.01)
CPC (source: EP KR US)
H10B 12/053 (2023.02 - EP KR US); H10B 12/34 (2023.02 - EP US); H10B 20/00 (2023.02 - EP US); H10B 20/40 (2023.02 - EP US)
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 0019529 A1 20000406; CN 1152425 C 20040602; CN 1312955 A 20010912; EP 1116270 A1 20010718; JP 2002526928 A 20020820; JP 2007329489 A 20071220; JP 4149498 B2 20080910; KR 100423765 B1 20040322; KR 20010075236 A 20010809; TW 437060 B 20010528; US 6750095 B1 20040615
DOCDB simple family (application)
DE 9903031 W 19990922; CN 99809558 A 19990922; EP 99955764 A 19990922; JP 2000572937 A 19990922; JP 2007176125 A 20070704; KR 20017003577 A 20010321; TW 88116406 A 19991015; US 78796601 A 20010529