EP 1119875 A1 20010801 - SEMICONDUCTOR DEVICE WITH A NON-VOLATILE MEMORY
Title (en)
SEMICONDUCTOR DEVICE WITH A NON-VOLATILE MEMORY
Title (de)
HALBLEITERBAUTEIL MIT FESTWERTSPEICHER
Title (fr)
COMPOSANT A SEMI-CONDUCTEUR AVEC MEMOIRE REMANENTE
Publication
Application
Priority
- EP 00940280 A 20000524
- EP 0004891 W 20000524
- EP 99201765 A 19990604
Abstract (en)
[origin: WO0075994A1] The invention relates to a semiconductor device with a semiconductor body which is provided at a surface with a programmable and electrically erasable non-volatile memory comprising a matrix of memory cells which each comprise a field effect transistor with floating gate. A device according to the invention is characterized in that each memory cell comprises a select transistor T2 which is connected in series with the floating gate transistor T1, in that the memory cells form a matrix of the NOR type, and in that the select transistor is connected to the source of the floating-gate transistor, while both writing and erasing are carried out on the basis of the Fowler-Nordheim tunneling mechanism.
IPC 1-7
IPC 8 full level
G11C 16/04 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR)
G11C 16/0433 (2013.01 - EP); H01L 29/788 (2013.01 - KR); H10B 69/00 (2023.02 - EP KR); H10B 99/00 (2023.02 - KR)
Citation (search report)
See references of WO 0075994A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0075994 A1 20001214; EP 1119875 A1 20010801; JP 2003501838 A 20030114; KR 20010072189 A 20010731
DOCDB simple family (application)
EP 0004891 W 20000524; EP 00940280 A 20000524; JP 2001502170 A 20000524; KR 20017001409 A 20010202