EP 1121735 A1 20010808 - IMPROVED FAR-FIELD NITRIDE BASED SEMICONDUCTOR LASER
Title (en)
IMPROVED FAR-FIELD NITRIDE BASED SEMICONDUCTOR LASER
Title (de)
NITRID - HALBLEITERLASER MIT VERBESSERTEM FERNFELD
Title (fr)
LASER AMELIORE A SEMI-CONDUCTEUR AU NITRURE A CHAMP LOINTAIN
Publication
Application
Priority
- JP 31399398 A 19981016
- US 9924146 W 19991014
Abstract (en)
[origin: WO0024097A1] A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AIN and has a thickness greater than the thickness at which cracks would form if the second layer was grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AIN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
IPC 1-7
IPC 8 full level
H01L 33/00 (2006.01); H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP)
H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01S 5/20 (2013.01); H01S 5/32341 (2013.01)
Citation (search report)
See references of WO 0024097A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0024097 A1 20000427; WO 0024097 A8 20010517; EP 1121735 A1 20010808; JP 2000124552 A 20000428
DOCDB simple family (application)
US 9924146 W 19991014; EP 99954948 A 19991014; JP 31399398 A 19981016