EP 1123560 A2 20010816 - METHOD FOR PRODUCING A WAFER SUPPORT IN A HIGH-TEMPERATURE CVD REACTOR
Title (en)
METHOD FOR PRODUCING A WAFER SUPPORT IN A HIGH-TEMPERATURE CVD REACTOR
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES WAFERTRÄGERS IN EINEM HOCHTEMPERATUR-CVD-REAKTOR
Title (fr)
PROCEDE DE PRODUCTION D'UN SUPPORT DE TRANCHES DANS UN REACTEUR DE DEPOT CHIMIQUE EN PHASE VAPEUR HAUTE TEMPERATURE
Publication
Application
Priority
- DE 0001312 W 20000426
- DE 19919902 A 19990430
Abstract (en)
[origin: DE19919902A1] The invention relates to a method for producing a wafer support with a coating, applied after the cleaning of said wafer support which has been specially pre-fabricated by mechanical means. Said coating is produced by heating the cleaned wafer support to high temperatures, applying coating components for converting the surface of the wafer support into a protective layer, or for facilitating the deposition of the supplied components, in order for them to form a protective layer. The invention is characterised in that the inventive wafer support, comprising said special coating, can be used in a system and a method for high-temperature CVD processing, using aggressive gases in such a way, that in addition to the desired sequence of layers being reducibly deposited with a very high degree of uniformity in the material characteristics, there is no chemical interaction with the wafer support.
IPC 1-7
IPC 8 full level
C30B 25/12 (2006.01); C23C 16/34 (2006.01); C23C 16/458 (2006.01); H01L 21/205 (2006.01)
CPC (source: EP KR US)
C23C 16/4581 (2013.01 - EP US); H01L 21/68 (2013.01 - KR); Y10T 428/30 (2015.01 - EP US)
Citation (search report)
See references of WO 0067311A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19919902 A1 20001102; EP 1123560 A2 20010816; JP 2002543615 A 20021217; KR 20010053335 A 20010625; US 2001014397 A1 20010816; WO 0067311 A2 20001109; WO 0067311 A3 20010405
DOCDB simple family (application)
DE 19919902 A 19990430; DE 0001312 W 20000426; EP 00940151 A 20000426; JP 2000616061 A 20000426; KR 20007015096 A 20001230; US 75239500 A 20001228