Global Patent Index - EP 1125007 A1

EP 1125007 A1 20010822 - SUBMICRON METALLIZATION USING ELECTROCHEMICAL DEPOSITION

Title (en)

SUBMICRON METALLIZATION USING ELECTROCHEMICAL DEPOSITION

Title (de)

SUBMIKRONE METALLISIERUNG UNTER VERWENDUNG ELEKTROCHEMISCHER BESCHICHTUNG

Title (fr)

METALLISATION SUBMICRONIQUE PAR DEPOT ELECTROCHIMIQUE

Publication

EP 1125007 A1 20010822 (EN)

Application

EP 99954748 A 19991005

Priority

  • US 9923187 W 19991005
  • US 10306198 P 19981005

Abstract (en)

[origin: WO0020662A1] Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

IPC 1-7

C25D 5/02; C25D 5/10; C25D 5/18

IPC 8 full level

C25D 5/02 (2006.01); C25D 5/10 (2006.01); C25D 5/18 (2006.01); C25D 7/12 (2006.01); C25D 21/12 (2006.01); C25D 21/14 (2006.01); H01L 21/288 (2006.01)

CPC (source: EP US)

C25D 5/02 (2013.01 - EP US); C25D 5/10 (2013.01 - EP US); C25D 5/18 (2013.01 - EP US); C25D 5/605 (2020.08 - EP US); C25D 5/611 (2020.08 - EP US); C25D 5/617 (2020.08 - EP US)

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 0020662 A1 20000413; WO 0020662 A9 20000914; AT 477353 T 20100815; DE 69942669 D1 20100923; EP 1125007 A1 20010822; EP 1125007 A4 20030528; EP 1125007 B1 20100811; JP 2002526663 A 20020820

DOCDB simple family (application)

US 9923187 W 19991005; AT 99954748 T 19991005; DE 69942669 T 19991005; EP 99954748 A 19991005; JP 2000574753 A 19991005