EP 1125298 A1 20010822 - REGULATED VOLTAGE SUPPLY CIRCUIT FOR INDUCING TUNNELING CURRENT IN FLOATING GATE MEMORY DEVICES
Title (en)
REGULATED VOLTAGE SUPPLY CIRCUIT FOR INDUCING TUNNELING CURRENT IN FLOATING GATE MEMORY DEVICES
Title (de)
REGULIERTE SPEISESPANNUNGSSCHALTUNG ZUR INDUKTION VON TUNNELSTROM IN FLOATING GATE SPEICHERZELLEN
Title (fr)
CIRCUIT D'ALIMENTATION A COURANT REGULE DESTINE A INDUIRE UN COURANT TUNNEL DANS DES DISPOSITIFS MEMOIRE A GRILLE FLOTTANTE
Publication
Application
Priority
US 9818548 W 19980903
Abstract (en)
[origin: WO0014747A1] A circuit is provided for applying a negative voltage (NVPP) to the control gate of a floating gate memory cell (10) and a positive voltage to the source drain or channel which comprises a positive voltage source to provide a positive voltage to the source (13) of the cell, and a negative voltage source responsive to the supply voltage to provide a negative voltage to the control gate. A voltage regulator (21) is included that is coupled to the negative voltage source and to the positive voltage source to maintain the negative voltage at a level responsive to the source voltage. The regulator maintains the negative voltage in response to the source voltage so that the electric field remains essentially constant over a range of values of source voltage.
IPC 1-7
IPC 8 full level
G11C 5/14 (2006.01); G11C 16/02 (2006.01); G11C 16/06 (2006.01); G11C 16/12 (2006.01); G11C 16/30 (2006.01)
CPC (source: EP)
G11C 5/147 (2013.01); G11C 16/12 (2013.01); G11C 16/30 (2013.01)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 0014747 A1 20000316; CN 1255813 C 20060510; CN 1367927 A 20020904; EP 1125298 A1 20010822; EP 1125298 A4 20030507; JP 2003522363 A 20030722; JP 4074748 B2 20080409
DOCDB simple family (application)
US 9818548 W 19980903; CN 98814235 A 19980903; EP 98943549 A 19980903; JP 2000569405 A 19980903