EP 1125320 A1 20010822 - LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
Title (en)
LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
Title (de)
HERSTELLUNG VON OHMSCHEN RÜCKSEITENKONTAKTEN ZU VERTIKAL ANGEORDNETEN HALBLEITERVORRICHTUNGEN BEI NIEDRIGER TEMPERATUR
Title (fr)
FORMATION A BASSE TEMPERATURE DE CONTACTS OHMIQUES REALISES SUR L'ENVERS DESTINES A DES DISPOSITIFS VERTICAUX
Publication
Application
Priority
- US 9921475 W 19990916
- US 10054698 P 19980916
Abstract (en)
[origin: WO0016382A1] The invention comprises a method for forming a metal-semiconductor ohmic contact (18) for use in a semiconductor device (10) having a plurality of epitaxial layers (14a-c) wherein the ohmic contact (18) is preferably formed after deposition of the epitaxial layers (14a-c). The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/04 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01S 5/042 (2006.01); H01S 5/323 (2006.01)
CPC (source: EP KR)
H01L 21/04 (2013.01 - KR); H01L 21/0485 (2013.01 - EP)
Citation (search report)
See references of WO 0016382A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0016382 A1 20000323; AU 6391699 A 20000403; CA 2343416 A1 20000323; CN 1178277 C 20041201; CN 1323446 A 20011121; EP 1125320 A1 20010822; JP 2002525849 A 20020813; JP 2011151428 A 20110804; JP 4785249 B2 20111005; KR 100694681 B1 20070313; KR 20010079759 A 20010822; MX PA01002751 A 20020408; TW 449932 B 20010811
DOCDB simple family (application)
US 9921475 W 19990916; AU 6391699 A 19990916; CA 2343416 A 19990916; CN 99812021 A 19990916; EP 99951484 A 19990916; JP 2000570823 A 19990916; JP 2011108544 A 20110513; KR 20017002942 A 20010307; MX PA01002751 A 19990916; TW 88116007 A 19990916