EP 1130129 A1 20010905 - Source for thermal physical vapor deposition of organic electroluminescent layers
Title (en)
Source for thermal physical vapor deposition of organic electroluminescent layers
Title (de)
Quelle für thermische PVD-Beschichtung für organische elektrolumineszente Schichten
Title (fr)
Source pour depôt thermique physique en phase vapeur de couches organiques électroluminescentes
Publication
Application
Priority
US 51860000 A 20000303
Abstract (en)
A thermal physical vapor deposition electroluminescent source includes a housing (10) defining an enclosure having side walls (12,14) and a bottom wall (15), the enclosure receiving solid organic electroluminescent material (40) which can be vaporized, and the width of the housing having a dimension w<sub>h</sub>; and the housing has a conductive portion defining a vapor efflux aperture slit (22) having a width w<sub>s</sub> for permitting vaporized electroluminescent materials to pass through the slit onto a surface of a substrate. A conductive baffle member (30) has width b, the baffle member being centered on the slit and spaced from the side walls and spaced from the top plate by a distance m, the baffle member substantially providing a line-of-sight covering of the slit preventing direct access of vaporized electroluminescent materials to the slit, and preventing particulate electroluminescent materials from passing through the slit; and a straight-line projection from an edge of the slit to an edge of the baffle member onto a side wall defining a position on the side wall such that such position is spaced from the top plate by a dimension L. The ratio of the dimensions w<sub>h</sub> to w<sub>s</sub> is in a range of from 1.5 to 6.0; the ratio of L to w<sub>s</sub> is in a range of from 2 to 6; and the ratio of m to L is in a range of from 0.15 to 0.40. Heat is applied to different parts of the housing to cause vapor deposition.
IPC 1-7
IPC 8 full level
C23C 14/12 (2006.01); C23C 14/24 (2006.01); H01L 51/50 (2006.01); H05B 33/10 (2006.01); H01L 51/00 (2006.01)
CPC (source: EP US)
C23C 14/243 (2013.01 - EP US); H10K 71/164 (2023.02 - EP US)
Citation (applicant)
- US 2447789 A 19480824 - BARR EDGAR E
- US 3271562 A 19660906 - ROBERTS JR GILBERT C, et al
- GB 766119 A 19570116 - BRITISH DIELECTRIC RES LTD
Citation (search report)
- [A] DE 1521504 B1 19691204 - SIEMENS AG [DE]
- [A] GB 766119 A 19570116 - BRITISH DIELECTRIC RES LTD
- [A] PATENT ABSTRACTS OF JAPAN vol. 008, no. 168 (C - 236) 3 August 1984 (1984-08-03)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
US 6237529 B1 20010529; DE 60144355 D1 20110519; EP 1130129 A1 20010905; EP 1130129 B1 20110406; JP 2001291589 A 20011019; JP 4520059 B2 20100804
DOCDB simple family (application)
US 51860000 A 20000303; DE 60144355 T 20010219; EP 01200573 A 20010219; JP 2001058355 A 20010302