EP 1132954 B1 20080625 - Process for forming a silicon-germanium base of a heterojunction bipolar transistor
Title (en)
Process for forming a silicon-germanium base of a heterojunction bipolar transistor
Title (de)
Verfahren zur Herstellung eines Silizium-Germanium Basis eines Heteroübergang-Bipolartransistors
Title (fr)
Procédé de fabrication d'une base silicium-germanium d'un transistor bipolaire à hétérojonction
Publication
Application
Priority
US 48003300 A 20000110
Abstract (en)
[origin: EP1132954A2] A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate (10) having a mesa (12) surrounded by a trench (16) is formed. Next, a silicon-germanium layer (20) is deposited on the substrate (10) and the portion of the silicon-germanium layer (20) adjacent the mesa (12) is removed to form the silicon-germanium base (22). In a second embodiment, the process comprises the steps of forming a silicon substrate (10) having a mesa (12) surrounded by a trench (16), forming a dielectric layer (34) in the trench (16) adjacent the mesa (12), and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base (22). <IMAGE>
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/73 (2006.01); H01L 29/165 (2006.01); H01L 29/737 (2006.01)
CPC (source: EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/66242 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1132954 A2 20010912; EP 1132954 A3 20040218; EP 1132954 B1 20080625; AT E399367 T1 20080715; CN 1156899 C 20040707; CN 1304169 A 20010718; DE 60134511 D1 20080807; JP 2001223224 A 20010817; JP 3701873 B2 20051005; KR 100354118 B1 20020928; KR 20010070331 A 20010725; SG 89368 A1 20020618; TW 475225 B 20020201; US 2001026986 A1 20011004; US 6251738 B1 20010626; US 6417059 B2 20020709
DOCDB simple family (application)
EP 01300208 A 20010110; AT 01300208 T 20010110; CN 00129493 A 20001229; DE 60134511 T 20010110; JP 2001000070 A 20010104; KR 20000080061 A 20001222; SG 200100017 A 20010102; TW 89123908 A 20001110; US 48003300 A 20000110; US 86737301 A 20010529