EP 1133788 A1 20010919 - SILANE-BASED OXIDE ANTI-REFLECTIVE COATING FOR PATTERNING OF METAL FEATURES IN SEMICONDUCTOR MANUFACTURING
Title (en)
SILANE-BASED OXIDE ANTI-REFLECTIVE COATING FOR PATTERNING OF METAL FEATURES IN SEMICONDUCTOR MANUFACTURING
Title (de)
SILAN-BASIERTE ANTIREFLEXIONSOXIDSCHICHT ZUR METALLSTRUKTURIERUNG IN HALBLEITERHERSTELLUNGSPROZESS
Title (fr)
REVETEMENT ANTIREFLECHISSANT D'OXYDE A BASE DE SILANE POUR LA FORMATION DE MOTIFS METALLIQUES DANS LA FABRICATION DE SEMI-CONDUCTEURS
Publication
Application
Priority
- US 9914599 W 19990628
- US 19993698 A 19981125
Abstract (en)
[origin: WO0031782A1] A silane-based oxide (40) having a thickness of about 300 nm or less is formed for use in an anti-reflective coating for patterning metal interconnects having small dimensions (e.g., 0.18 micron or less) and large aspect ratios. The oxide (40) is formed in such a way that it does not react with a popular deep ultraviolet photoresist (38). The reaction, known as "footing" (18), can result in a loss of the intended feature dimensions. In one embodiment of the method, the silane-based oxide (40) is deposited using a non-nitrogen carrier gas for the silane. In an alternate embodiment, a nitrogen carrier gas is used and the oxide (40) is subsequently exposed to an N2O plasma (2). The resulting oxide (40) can be made using a low-cost, high-throughput, and low-defect process as compared to other oxide formation methods.
IPC 1-7
IPC 8 full level
G03F 7/11 (2006.01); C23C 16/04 (2006.01); G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/316 (2006.01); H01L 21/3213 (2006.01)
CPC (source: EP KR)
G03F 7/091 (2013.01 - EP); H01L 21/027 (2013.01 - KR); H01L 21/0276 (2013.01 - EP); H01L 21/3105 (2013.01 - EP); H01L 21/32139 (2013.01 - EP)
Citation (search report)
See references of WO 0031782A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0031782 A1 20000602; EP 1133788 A1 20010919; JP 2002530885 A 20020917; KR 20010086053 A 20010907
DOCDB simple family (application)
US 9914599 W 19990628; EP 99930795 A 19990628; JP 2000584517 A 19990628; KR 20017006582 A 20010525