EP 1133795 A1 20010919 - METHOD FOR PRODUCING AN INTEGRATED CIRCUIT PROCESSED ON BOTH SIDES
Title (en)
METHOD FOR PRODUCING AN INTEGRATED CIRCUIT PROCESSED ON BOTH SIDES
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES BEIDSEITIG PROZESSIERTEN INTEGRIERTEN SCHALTKREISES
Title (fr)
PROCEDE DE PRODUCTION D'UN CIRCUIT INTEGRE TRAITE SUR SES DEUX FACES
Publication
Application
Priority
- DE 19853703 A 19981120
- EP 9908817 W 19991117
Abstract (en)
[origin: DE19853703A1] IC production comprises applying a metallization onto a thinned finished wafer bonded to a handling wafer for connection by vias to the finished wafer metallization (2, 3) and/or circuit structure (1). An IC production process comprises providing via holes to the back face of a first substrate having a circuit structure (1) and an overlying metallization structure (2, 3), insulating the via holes from the circuit structure, applying a planarizing layer over the metallization structure, bonding the resulting first wafer to a handling wafer, thinning the first wafer from the back face to expose the via holes or their metallized connections and applying a second metallization structure on the chip back face for connection by the vias with the first metallization structure and/or the circuit structure. Independent claims are also included for the following: (i) an IC produced by the above process; (ii) a module for incorporation in a chip card, the module comprising the above IC; and (iii) a chip card having the above IC or module.
IPC 1-7
IPC 8 full level
H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 27/00 (2006.01); H01L 27/04 (2006.01)
CPC (source: EP US)
H01L 21/76898 (2013.01 - EP US); H01L 21/8221 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
C-Set (source: EP US)
Citation (examination)
- US 5814889 A 19980929 - GAUL STEPHEN JOSEPH [US]
- US 5807783 A 19980915 - GAUL STEPHEN JOSEPH [US], et al
- See also references of WO 0031796A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19853703 A1 20000525; AU 1271900 A 20000613; CN 1181540 C 20041222; CN 1326590 A 20011212; EP 1133795 A1 20010919; JP 2002530891 A 20020917; US 6583030 B1 20030624; WO 0031796 A1 20000602
DOCDB simple family (application)
DE 19853703 A 19981120; AU 1271900 A 19991117; CN 99813339 A 19991117; EP 9908817 W 19991117; EP 99956002 A 19991117; JP 2000584529 A 19991117; US 85625001 A 20010815