EP 1137170 A3 20031203 - High frequency circuit
Title (en)
High frequency circuit
Title (de)
Hochfrequenzschaltungsanordnung
Title (fr)
Circuit à haute fréquence
Publication
Application
Priority
- JP 2000083844 A 20000324
- JP 2001059428 A 20010305
Abstract (en)
[origin: EP1137170A2] A first circuit which is constituted by a thin film resistor is connected between the collector of a transistor and a power supply terminal, and a second circuit which is constituted by a semiconductor resistor is connected between the emitter of the transistor and a grounding terminal. The film thickness of a thin film resistor is set to not more than its skin depth at a frequency to be compensated for. <IMAGE>
IPC 1-7
IPC 8 full level
H03F 1/56 (2006.01); H03F 1/48 (2006.01); H03F 3/60 (2006.01)
CPC (source: EP US)
H03F 3/60 (2013.01 - EP US)
Citation (search report)
- [XY] US 3449683 A 19690610 - GANE CHARLES E
- [XY] US 5200713 A 19930406 - GRACE MARTIN I [US], et al
- [XY] EP 0794613 A1 19970910 - TRW INC [US]
- [Y] US 4134080 A 19790109 - GENTZLER CHARLES R
- [A] PATENT ABSTRACTS OF JAPAN vol. 1995, no. 01 28 February 1995 (1995-02-28)
- [A] PATENT ABSTRACTS OF JAPAN vol. 1995, no. 03 28 April 1995 (1995-04-28)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1137170 A2 20010926; EP 1137170 A3 20031203; JP 2001339255 A 20011207; US 2002008553 A1 20020124; US 6927633 B2 20050809
DOCDB simple family (application)
EP 01302649 A 20010322; JP 2001059428 A 20010305; US 81330301 A 20010321