EP 1141997 A2 20011010 - PHYSICAL VAPOR DEPOSITION OF SEMICONDUCTING AND INSULATING MATERIALS
Title (en)
PHYSICAL VAPOR DEPOSITION OF SEMICONDUCTING AND INSULATING MATERIALS
Title (de)
PHYSIKALISCHE DAMPFABSCHEIDUNG HALBLEITER- UND ISOLIER- STOFFE
Title (fr)
DEPOT PHYSIQUE EN PHASE VAPEUR DE MATIERES SEMI-CONDUCTRICES ET ISOLANTES
Publication
Application
Priority
- US 9930476 W 19991220
- US 21918798 A 19981221
Abstract (en)
[origin: WO0038213A2] The invention provides an apparatus for depositing semiconducting, insulating, and particularly, high dielectric constant (HDC) material, such as barium strontium titanate, on a substrate through reactive sputtering. The apparatus comprises a physical vapor deposition chamber having an asymmetric bipolar pulsed direct current power source supplying a first bias to a target and a second bias to the substrate support member in the chamber. The pulsed direct current power source supplies an electrical waveform comprising a negative deposition voltage that attracts the argon ions to cause sputtering from the target and a reverse small positive neutralization voltage to cause charge neutralisation of the target that eliminates arcing and micro-arcing on the target surface. Preferably, the first bias is synchronized with the second bias for the deposition period and the neutralization period. A floating-ground shield surrounds the processing region between the target and the substrate. A first gast inlet introduces a gas for the plasma through the top portion of the chamber, and a second gas inlet introduces a reaction gas adjacent the substrate surface to react with the sputtered material to form the HDC film on the substrate.
IPC 1-7
IPC 8 full level
C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01)
CPC (source: EP KR)
C23C 14/345 (2013.01 - EP KR); C23C 14/35 (2013.01 - EP KR); H01J 37/3402 (2013.01 - EP); H01J 37/3405 (2013.01 - KR); H01J 37/3444 (2013.01 - EP)
Citation (search report)
See references of WO 0038213A2
Designated contracting state (EPC)
DE GB
DOCDB simple family (publication)
WO 0038213 A2 20000629; WO 0038213 A3 20000914; EP 1141997 A2 20011010; JP 2002533574 A 20021008; KR 20010089674 A 20011008; TW 454245 B 20010911
DOCDB simple family (application)
US 9930476 W 19991220; EP 99968156 A 19991220; JP 2000590192 A 19991220; KR 20017007925 A 20010621; TW 88122549 A 19991221