EP 1142014 B1 20080903 - A METHOD OF MANUFACTURING A PERIPHERAL TRANSISTOR OF A NON-VOLATILE MEMORY
Title (en)
A METHOD OF MANUFACTURING A PERIPHERAL TRANSISTOR OF A NON-VOLATILE MEMORY
Title (de)
EIN VERFAHREN ZUR HERSTELLUNG VON PERIPHEREN TRANSISTOREN FÜR EINEN FESTWERTSPEICHER
Title (fr)
UN PROCEDE POUR FABRIQUER DES TRANSISTORS PERIPHERIQUES POUR UNE MEMOIRE NON VOLATILE
Publication
Application
Priority
- US 9925465 W 19991027
- US 19977298 A 19981125
Abstract (en)
[origin: WO0031793A1] In a non-volatile memory comprising a region (2) for core memory cells and a peripheral region (4a) on a substrate (6), a method for improving the electrostatic discharge (ESD) robustness of the non-volatile memory comprises the steps of lightly doping the source region (18) and the drain region (20) of a peripheral transistor (12) in the peripheral region (4a) with a first n-type dopant, providing a double diffusion implant mask (10) having an opening over the region (2) for the core memory cells and also an opening (8) over the peripheral region (4a), and performing a double diffusion implantation through the opening (8) over the peripheral region (4a). In an embodiment, the step of performing the double-diffusion implantation comprises the steps of implanting a second n-type dopant comprising phosphorus into the source and drain regions (18) and (20), and implanting a third n-type dopant comprising arsenic into the source and drain regions (18) and (20) subsequent to the step of implanting the second n-type dopant.
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 21/8239 (2006.01); H01L 21/8247 (2006.01); H01L 27/02 (2006.01); H01L 27/04 (2006.01); H01L 27/088 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR US)
H01L 27/0266 (2013.01 - EP US); H10B 41/40 (2023.02 - EP US); H10B 41/43 (2023.02 - EP US); H10B 99/00 (2023.02 - KR)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 0031793 A1 20000602; DE 69939491 D1 20081016; EP 1142014 A1 20011010; EP 1142014 B1 20080903; JP 2002530889 A 20020917; KR 100645572 B1 20061113; KR 20010089495 A 20011006; US 6238975 B1 20010529
DOCDB simple family (application)
US 9925465 W 19991027; DE 69939491 T 19991027; EP 99972785 A 19991027; JP 2000584526 A 19991027; KR 20017006470 A 20010523; US 19977298 A 19981125