Title (en)

METHOD AND APPARATUS FOR LOW ENERGY ELECTRON ENHANCED ETCHING AND CLEANING OF SUBSTRATES

Title (de)

VERFAHREN UND VORRICHTUNG FÜR VERBESSERTES ELEKTRONENÄTZEN MIT NIEDRIGENERGIE UND REINIGEN VON SUBSTRATEN

Title (fr)

PROCEDE ET DISPOSITIF SERVANT A AMELIORER LA GRAVURE AUX ELECTRONS BASSE ENERGIE ET LE NETTOYAGE DE SUBSTRATS

Publication

EP 1144735 B1 20140212 (EN)

Application

EP 98961877 A 19981203

Priority

US 9825606 W 19981203

Abstract (en)

[origin: CA2353479A1] A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical suport located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed with in the plasma to control further the extraction or retardation of particles fro m the plasma.

IPC 8 full level

H01J 37/32 (2006.01); H01L 21/302 (2006.01); C25F 1/02 (2006.01); C25F 3/02 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01)

CPC (source: EP)

H01J 37/32596 (2013.01); H01J 37/32623 (2013.01); H01J 2237/3341 (2013.01); H01J 2237/335 (2013.01)

Citation (examination)

• US 6258287 B1 20010710 - MARTIN KEVIN P [US], et al
• WO 9733300 A1 19970912 - MATTSON TECH INC [US]

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

CA 2353479 A1 20000608; CA 2353479 C 20080212; EP 1144735 A1 20011017; EP 1144735 A4 20070110; EP 1144735 B1 20140212; JP 2003504834 A 20030204; JP 4607328 B2 20110105; MX PA01005602 A 20020424

DOCDB simple family (application)

CA 2353479 A 19981203; EP 98961877 A 19981203; JP 2000585478 A 19981203; MX PA01005602 A 19981203