EP 1145252 A2 20011017 - EPITAXIAL THIN FILMS
Title (en)
EPITAXIAL THIN FILMS
Title (de)
EPITAXIALE DÜNNSCHICHT
Title (fr)
COUCHES MINCES EPITAXIALES
Publication
Application
Priority
- US 0000824 W 20000112
- US 11551999 P 19990112
Abstract (en)
[origin: WO0042621A2] Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
IPC 1-7
IPC 8 full level
C30B 29/22 (2006.01); B01D 71/02 (2006.01); H01B 1/00 (2006.01); H01G 4/06 (2006.01); H01G 4/33 (2006.01); H01L 21/20 (2006.01); H01L 39/24 (2006.01); H01L 49/02 (2006.01); H01M 8/02 (2006.01)
IPC 8 main group level
H01B (2006.01)
CPC (source: EP)
H10N 60/0632 (2023.02)
Citation (search report)
See references of WO 0042621A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0042621 A2 20000720; WO 0042621 A3 20010802; AU 4165600 A 20000801; AU 774828 B2 20040708; CA 2359710 A1 20000720; CA 2359710 C 20080902; CN 100385696 C 20080430; CN 1526172 A 20040901; EP 1145252 A2 20011017; JP 2002535224 A 20021022; JP 2011044705 A 20110303
DOCDB simple family (application)
US 0000824 W 20000112; AU 4165600 A 20000112; CA 2359710 A 20000112; CN 00804586 A 20000112; EP 00921311 A 20000112; JP 2000594127 A 20000112; JP 2010166139 A 20100723