Global Patent Index - EP 1145298 A3

EP 1145298 A3 2002-11-20 - METHOD FOR PRODUCING SCHOTTKY DIODES

Title (en)

METHOD FOR PRODUCING SCHOTTKY DIODES

Title (de)

VERFAHREN ZUR HERSTELLUNG VON SCHOTTKY-DIODEN

Title (fr)

PROCEDE DE PRODUCTION DE DIODES SCHOTTKY

Publication

EP 1145298 A3 (DE)

Application

EP 99934481 A

Priority

  • DE 9901429 W
  • DE 19823482 A

Abstract (en)

[origin: WO9962113A2] The invention relates to a method for producing Schottky diodes which comprise a guard ring (10) in the marginal area of the Schottky contact. Said guard ring (10) is produced by depositing a guard ring material (4) on the surface (8) of the semiconductor layer (2), said surface being provided with a structured masking layer (3) beforehand, and afterwards by siliconizing the guard ring material (4). The guard ring material (4) is a metal, especially a high barrier metal which, in particular, contains platinum.

IPC 1-7 (main, further and additional classification)

H01L 21/329

IPC 8 full level (invention and additional information)

H01L 29/47 (2006.01); H01L 21/329 (2006.01); H01L 29/872 (2006.01)

CPC (invention and additional information)

H01L 29/66143 (2013.01); H01L 29/872 (2013.01)

Designated contracting state (EPC)

DE FI FR GB IT NL

EPO simple patent family

WO 9962113 A2 19991202; WO 9962113 A3 20021003; EP 1145298 A2 20011017; EP 1145298 A3 20021120; JP 2003514371 A 20030415; US 6551911 B1 20030422

INPADOC legal status


2005-02-09 [18W] WITHDRAWN

- Effective date: 20041221

2002-11-20 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A3

- Designated State(s): DE FI FR GB IT NL

2001-10-17 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000121

2001-10-17 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): DE FI FR GB IT NL

2001-10-17 [XX] MISCELLANEOUS:

- Free text: DERZEIT SIND DIE WIPO-PUBLIKATIONSDATEN A3 NICHT VERFUEGBAR.