EP 1145298 A3 20021120 - METHOD FOR PRODUCING SCHOTTKY DIODES
Title (en)
METHOD FOR PRODUCING SCHOTTKY DIODES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SCHOTTKY-DIODEN
Title (fr)
PROCEDE DE PRODUCTION DE DIODES SCHOTTKY
Publication
Application
Priority
- DE 9901429 W 19990511
- DE 19823482 A 19980526
Abstract (en)
[origin: WO9962113A2] The invention relates to a method for producing Schottky diodes which comprise a guard ring (10) in the marginal area of the Schottky contact. Said guard ring (10) is produced by depositing a guard ring material (4) on the surface (8) of the semiconductor layer (2), said surface being provided with a structured masking layer (3) beforehand, and afterwards by siliconizing the guard ring material (4). The guard ring material (4) is a metal, especially a high barrier metal which, in particular, contains platinum.
IPC 1-7
IPC 8 full level
H01L 21/329 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
H01L 29/66143 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US)
Citation (search report)
See references of WO 9962113A2
Designated contracting state (EPC)
DE FI FR GB IT NL
DOCDB simple family (publication)
WO 9962113 A2 19991202; WO 9962113 A3 20021003; EP 1145298 A2 20011017; EP 1145298 A3 20021120; JP 2003514371 A 20030415; US 6551911 B1 20030422
DOCDB simple family (application)
DE 9901429 W 19990511; EP 99934481 A 19990511; JP 2000551431 A 19990511; US 49176700 A 20000126